IRLR014TRL

更新时间： 2024-09-16 05:39:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	2167K
描述
Power MOSFET

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中文翻译

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数据手册
替代型号

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IRLR014TRL 数据手册

IRLR014, IRLU014, SiHLR014, SiHLU014

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

Available

• Surface Mount (IRLR014/SiHLR014)

0.20

R_DS(on)(Ω)

Q_g(Max.) (nC)

Q_gs(nC)

V_GS= 5.0 V

RoHS*

• Straight Lead (IRLU014/SiHLU014)

8.4

3.5

COMPLIANT

• Available in Tape and Reel

• Logic-Level Gate Drive

• R_DS(on)Specified at V_GS= 4 V and 5 V

• Fast Switching

_gd(nC)

6.0

Configuration

Single

• Lead (Pb)-free Available

DPAK

(TO-252)

IPAK

(TO-251)

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

N-Channel MOSFET

lead version (IRFU/SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface mount applications.

ORDERING INFORMATION

Package

DPAK (TO-252)

IRLR014TRLPbF^a

SiHLR014TL-E3^a

IRLR014TRL^a

IPAK (TO-251)

IRLU014PbF

SiHLU014-E3

IRLU014

IRLR014PbF

SiHLR014-E3

IRLR014

IRLR014TRPbF^a

SiHLR014T-E3^a

IRLR014TR^a

Lead (Pb)-free

SnPb

SiHLR014

SiHLR014T^a

SiHLR014TL^a

SiHLU014

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_C= 25 °C

T_C=100°C

7.7

4.9

Continuous Drain Current

V_GSat 5.0 V

I_D

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.20

0.020

W/°C

Linear Derating Factor (PCB Mount)^e

Single Pulse Avalanche Energy^b

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)^e

Peak Diode Recovery dV/dt^c

E_AS

P_D

_C= 25 °C

T_A= 25 °C

2.5

dV/dt

4.5

V/ns

°C

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_J, T_stg

- 55 to + 150

260^d

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 25 V, starting T_J= 25 °C, L = 924 µH, R_G= 25 Ω, I_AS= 7.7 A (see fig. 12).

c. I_SD≤ 10 A, dI/dt ≤ 90 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91321

S-Pending-Rev. A, 21-Jul-08

www.vishay.com

WORK-IN-PROGRESS

12 3 4 5 6 7 8

中文翻译

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IRLR014TRL 替代型号

型号	品牌	替代类型	描述	数据表
IRLR014	VISHAY	完全替代	Power MOSFET

与IRLR014TRL相关器件

型号	品牌	获取价格	描述	数据表
IRLR014TRLPBF	VISHAY	获取价格	Power MOSFET
IRLR014TRPBF	VISHAY	获取价格	Power MOSFET
IRLR020	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 50V V(BR)DSS \| 14A I(D) \| TO-252
IRLR024	INFINEON	获取价格	5-BIT PROGRAMMABLE SYNCHRONOUS BUCK, NON-SYNCHRONOUS,ADJUSTABLE LDO AND 200mA ON-BOARD LDO
IRLR024	VISHAY	获取价格	Power MOSFET
IRLR024	SAMSUNG	获取价格	Power Field-Effect Transistor, 14A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Meta
IRLR024, IRLU024, SiHLR024, SiHLU024	VISHAY	获取价格	Power MOSFET
IRLR024_09	VISHAY	获取价格	Power MOSFET
IRLR024A	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 15A I(D) \| TO-252AA
IRLR024N	INFINEON	获取价格	HEXFET Power MOSFET

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