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IRLR014TRLPBF PDF预览

IRLR014TRLPBF

更新时间: 2024-11-06 05:39:31
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
8页 2167K
描述
Power MOSFET

IRLR014TRLPBF 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:TO-252包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.17Is Samacsys:N
其他特性:LOGIC LEVEL COMPATIBLE雪崩能效等级(Eas):27.4 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):7.7 A
最大漏极电流 (ID):7.7 A最大漏源导通电阻:0.2 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):25 W最大脉冲漏极电流 (IDM):31 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRLR014TRLPBF 数据手册

 浏览型号IRLR014TRLPBF的Datasheet PDF文件第2页浏览型号IRLR014TRLPBF的Datasheet PDF文件第3页浏览型号IRLR014TRLPBF的Datasheet PDF文件第4页浏览型号IRLR014TRLPBF的Datasheet PDF文件第5页浏览型号IRLR014TRLPBF的Datasheet PDF文件第6页浏览型号IRLR014TRLPBF的Datasheet PDF文件第7页 
IRLR014, IRLU014, SiHLR014, SiHLU014  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• Dynamic dV/dt Rating  
PRODUCT SUMMARY  
VDS (V)  
60  
Available  
• Surface Mount (IRLR014/SiHLR014)  
0.20  
RDS(on) (Ω)  
Qg (Max.) (nC)  
Qgs (nC)  
VGS = 5.0 V  
RoHS*  
• Straight Lead (IRLU014/SiHLU014)  
8.4  
3.5  
COMPLIANT  
• Available in Tape and Reel  
• Logic-Level Gate Drive  
• RDS(on) Specified at VGS = 4 V and 5 V  
• Fast Switching  
Q
gd (nC)  
6.0  
Configuration  
Single  
D
• Lead (Pb)-free Available  
DPAK  
(TO-252)  
IPAK  
(TO-251)  
DESCRIPTION  
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
The DPAK is designed for surface mounting using vapor  
phase, infrared, or wave soldering techniques. The straight  
G
S
N-Channel MOSFET  
lead version (IRFU/SiHFU series) is for through-hole  
mounting applications. Power dissipation levels up to 1.5 W  
are possible in typical surface mount applications.  
ORDERING INFORMATION  
Package  
DPAK (TO-252)  
DPAK (TO-252)  
DPAK (TO-252)  
IRLR014TRLPbFa  
SiHLR014TL-E3a  
IRLR014TRLa  
IPAK (TO-251)  
IRLU014PbF  
SiHLU014-E3  
IRLU014  
IRLR014PbF  
SiHLR014-E3  
IRLR014  
IRLR014TRPbFa  
SiHLR014T-E3a  
IRLR014TRa  
Lead (Pb)-free  
SnPb  
SiHLR014  
SiHLR014Ta  
SiHLR014TLa  
SiHLU014  
Note  
a. See device orientation.  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
60  
10  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
TC = 25 °C  
TC =100°C  
7.7  
4.9  
Continuous Drain Current  
VGS at 5.0 V  
ID  
A
Pulsed Drain Currenta  
IDM  
31  
Linear Derating Factor  
0.20  
0.020  
47  
W/°C  
mJ  
Linear Derating Factor (PCB Mount)e  
Single Pulse Avalanche Energyb  
Maximum Power Dissipation  
Maximum Power Dissipation (PCB Mount)e  
Peak Diode Recovery dV/dtc  
EAS  
PD  
T
C = 25 °C  
25  
W
TA = 25 °C  
2.5  
dV/dt  
4.5  
V/ns  
°C  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
TJ, Tstg  
- 55 to + 150  
260d  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 25 V, starting TJ = 25 °C, L = 924 µH, RG = 25 Ω, IAS = 7.7 A (see fig. 12).  
c. ISD 10 A, dI/dt 90 A/µs, VDD VDS, TJ 150 °C.  
d. 1.6 mm from case.  
e. When mounted on 1" square PCB (FR-4 or G-10 material).  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91321  
S-Pending-Rev. A, 21-Jul-08  
www.vishay.com  
1
WORK-IN-PROGRESS  

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