IRL520N

更新时间： 2024-11-22 22:48:03

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
8页	136K
描述
HEXFET?? Power MOSFET

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中文翻译

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数据手册
替代型号

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IRL520N 数据手册

PD - 91494A

IRL520N

HEXFET^®Power MOSFET

l Logic-Level Gate Drive

l Advanced Process Technology

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

V_DSS= 100V

R_DS(on)= 0.18Ω

l Fully Avalanche Rated

I_D= 10A

Description

FifthGenerationHEXFETsfromInternationalRectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrialapplicationsatpowerdissipation

levels to approximately 50 watts. The low thermal

resistance and low package cost of the TO-220

contribute to its wide acceptance throughout the

industry.

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

7.1

P_D@T_C= 25°C

Power Dissipation

0.32

W/°C

Linear Derating Factor

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 16

Single Pulse Avalanche Energy

Avalanche Current

6.0

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

4.8

V/ns

5.0

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

Units

R_θJC

R_θCS

R_θJA

3.1

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.50

–––

°C/W

5/13/98

12 3 4 5 6 7 8

中文翻译

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IRL520N 替代型号

型号	品牌	替代类型	描述	数据表
IRL520NPBF	INFINEON	功能相似	Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Met
IRL520	INFINEON	功能相似	HEXFET POWER MOSFET

与IRL520N相关器件

型号	品牌	获取价格	描述	数据表
IRL520N-010	INFINEON	获取价格	Power Field-Effect Transistor, 10A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Met
IRL520NL	ETC	获取价格	100V Single N-Channel HEXFET Power MOSFET in a TO-262 package
IRL520NLPBF	INFINEON	获取价格	Logic-Level Gate Drive
IRL520NPBF	INFINEON	获取价格	Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Met
IRL520NS	INFINEON	获取价格	HEXFET Power MOSFET
IRL520NSL	INFINEON	获取价格	HEXFET Power MOSFET
IRL520NSPBF	INFINEON	获取价格	Logic-Level Gate Drive
IRL520NSTRLPBF	INFINEON	获取价格	暂无描述
IRL520NSTRR	INFINEON	获取价格	暂无描述
IRL520NSTRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Met