IRL520PBF

更新时间： 2024-10-14 05:39:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	1029K
描述
Power MOSFET

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中文翻译

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IRL520PBF 数据手册

IRL520, SiHL520

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

100

Available

• Repetitive Avalanche Rated

• Logic-Level Gate Drive

R_DS(on)(Ω)

V_GS= 5.0 V

0.27

RoHS*

COMPLIANT

Q_g(Max.) (nC)

3.0

7.1

• R_DS(on)Specified at V_GS= 4 V and 5 V

• 175 °C Operating Temperature

• Fast Switching

_gs(nC)

_gd(nC)

Configuration

Single

• Ease of Paralleling

• Lead (Pb)-free Availble

TO-220

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost the TO-220 contribute to its wide

acceptance throughout the industry.

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-220

IRL520PbF

SiHL520-E3

IRL520

Lead (Pb)-free

SnPb

SiHL520

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

100

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_C= 25 °C

T_C=100°C

9.2

Continuous Drain Current

_GSat 5.0 V

I_D

6.5

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.40

170

W/°C

Single Pulse Avalanche Energy^b

Avalanche Current^a

E_AS

I_AR

9.2

Repetitive Avalanche Energy^a

E_AR

6.0

Maximum Power Dissipation

T_C= 25 °C

P_D

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

5.5

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 175

300^d

°C

for 10 s

lbf · in

N · m

Mounting Torque

6-32 or M3 screw

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 25 V, starting T_J= 25 °C, L = 3.0 mH, R_G= 25 Ω, I_AS= 9.2 A (see fig. 12).

c. I_SD≤ 9.2 A, dI/dt ≤ 110 A/µs, V_DD≤ V_DS, T_J≤ 175 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91298

S-Pending-Rev. A, 21-Jul-08

www.vishay.com

WORK-IN-PROGRESS

12 3 4 5 6 7 8

中文翻译

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与IRL520PBF相关器件

型号	品牌	获取价格	描述	数据表
IRL520S	ETC	获取价格
IRL520SPBF	INFINEON	获取价格	Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Me
IRL520SU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 9.2A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Me
IRL521	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 80V V(BR)DSS \| 7.9A I(D) \| TO-220AB
IRL530	FAIRCHILD	获取价格	Advanced Power MOSFET
IRL530	SAMSUNG	获取价格	Power Field-Effect Transistor, 13A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta
IRL530	INFINEON	获取价格	HEXFET Power MOSFET
IRL530	VISHAY	获取价格	Power MOSFET
IRL530-009	INFINEON	获取价格	Power Field-Effect Transistor, 15A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Met
IRL530-009PBF	INFINEON	获取价格	15A, 100V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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