Datasheet > IRL530NL

IRL530NL

更新时间： 2024-10-13 23:59:43

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲
页数	文件大小	规格书
10页	250K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 17A I(D) \| TO-262AA

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IRL530NL 数据手册

PD - 91349B

IRL530NS/L

HEXFET^®Power MOSFET

l Advanced Process Technology

l Surface Mount (IRL530NS)

l Low-profile through-hole (IRL530NL)

l 175°C Operating Temperature

l Fast Switching

V_DSS=100V

R_DS(on)= 0.10Ω

l Fully Avalanche Rated

I_D= 17A

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedizeddevicedesignthatHEXFETPowerMOSFETs

arewellknownfor,providesthedesignerwithanextremely

efficient and reliable device for use in a wide variety of

applications.

The D²Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

D²Pak is suitable for high current applications because of

its low internal connection resistance and can dissipate

up to 2.0W in a typical surface mount application.

The through-hole version (IRL530NL) is available for low-

profile applications.

T O -262

Pak

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10Vꢀ

Pulsed Drain Current ꢀ

P_D@T_A= 25°C

P_D@T_C= 25°C

Power Dissipation

3.8

Power Dissipation

Linear Derating Factor

0.53

± 20

150

9.0

7.9

5.0

W/°C

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energyꢀ

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt ꢀ

Operating Junction and

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Junction-to-Ambient ( PCB Mounted,steady-state)**

Typ.

–––

Max.

1.9

Units

R_θJC

R_θJA

°C/W

–––

5/13/98

12 3 4 5 6 7...10

中文翻译

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IRL530NPBF	INFINEON	获取价格	Power Field-Effect Transistor, 17A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Met
IRL530NS	INFINEON	获取价格	HEXFET?? Power MOSFET
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IRL530NSTRL	INFINEON	获取价格	Power Field-Effect Transistor, 17A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Met
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