是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.65 |
其他特性: | LOGIC LEVEL COMPATIBLE | 雪崩能效等级(Eas): | 440 mJ |
外壳连接: | DRAIN | 配置: | SINGLE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (ID): | 28 A |
最大漏源导通电阻: | 0.077 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 110 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | Matte Tin (Sn) - with Nickel (Ni) barrier | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRL540-017 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Me | |
IRL540-017PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Me | |
IRL540-019 | INFINEON |
获取价格 |
暂无描述 | |
IRL540-024 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Me | |
IRL540-029 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Me | |
IRL540-029PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Me | |
IRL540-030PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Me | |
IRL540-031 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Me | |
IRL540-031PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Me | |
IRL540A | FAIRCHILD |
获取价格 |
Advanced Power MOSFET |