Datasheet > IRL540S, SiHL540S

IRL540S, SiHL540S

更新时间： 2024-11-19 14:54:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	313K
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Power MOSFET

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IRL540S, SiHL540S

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

• Surface-mount

D²PAK (TO-263)

• Available in tape and reel

• Dynamic dv/dt rating

Available

• Repetitive avalanche rated

• Logic-level gate drive

• R_DS(on)specified at V_GS= 4 V and 5 V

• 175 °C operating temperature

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Note

N-Channel MOSFET

This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details



PRODUCT SUMMARY

V_DS(V)

100

DESCRIPTION

R_DS(on)()

V_GS= 5 V

0.077

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

Q_gmax. (nC)

9.4

Q_gs(nC)

_gd(nC)

The D²PAK (TO-263) is a surface-mount power package

capable of accommodating die size up to HEX-4. It provides

the highest power capability and the lowest possible

on-resistance in any existing surface-mount package. The

D²PAK (TO-263) is suitable for high current applications

because of its low internal connection resistance and can

dissipate up to 2.0 W in a typical surface-mount application.

Configuration

Single

ORDERING INFORMATION

Package

Lead (Pb)-free and halogen-free

Lead (Pb)-free

D²PAK (TO-263)

SiHL540S-GE3

IRL540SPbF

D²PAK (TO-263)

SiHL540STRL-GE3 ^a

IRL540STRLPbF ^a

Note

a. See device orientation

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

100

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

T_C= 25 °C

_C= 100 °C

Continuous drain current

V_GSat 5 V

I_D

Pulsed drain current ^a

I_DM

110

Linear derating factor

1.0

W/°C

Linear derating factor (PCB mount) ^e

Single pulse avalanche energy ^b

Avalanche current ^a

0.025

440

E_AS

I_AR

Repetitive avalanche energy ^a

Maximum power dissipation

Maximum power dissipation (PCB mount) ^e

Peak diode recovery dv/dt ^c

E_AR

T_C= 25 °C

150

P_D

V/ns

°C

T_A= 25 °C

3.7

dv/dt

5.5

Operating junction and storage temperature range

T_J, T_stg

-55 to +175

300

Soldering recommendations (peak temperature)

For 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. V_DD= 25 V, starting T_J= 25 °C, L = 841 μH, R_g= 25 , I_AS= 28 A (see fig. 12)

c. I_SD 28 A, di/dt  170 A/μs, V_DD V_DS, T_J 175 °C

d. 1.6 mm from case

e. When mounted on 1" square PCB (FR-4 or G-10 material)

S20-0684-Rev. D, 07-Sep-2020

Document Number: 90386

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...10

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与IRL540S, SiHL540S相关器件

型号	品牌	获取价格	描述	数据表
IRL540SPBF	VISHAY	获取价格	Power MOSFET
IRL540STRL	INFINEON	获取价格	Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Me
IRL540STRLPBF	VISHAY	获取价格	Power MOSFET
IRL541	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 80V V(BR)DSS \| 24A I(D) \| TO-220AB
IRL5602S	INFINEON	获取价格	HEXFET Power MOSFET
IRL5602SPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRL5602STRL	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 20V V(BR)DSS \| 24A I(D) \| TO-263AB
IRL5602STRR	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 20V V(BR)DSS \| 24A I(D) \| TO-263AB
IRL5NJ024	INFINEON	获取价格	LOGIC LEVEL HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5)
IRL5NJ024SCS	INFINEON	获取价格	55V Single N-Channel Hi-Rel MOSFET in a SMD-0.5 package - Standard Packaging

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