Source Content uid: | IRL520NSPBF | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | Objectid: | 8006017416 |
包装说明: | LEAD FREE, PLASTIC, D2PAK-3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | compound_id: | 215424216 |
风险等级: | 7.13 | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IRL520NSTRLPBF | INFINEON |
功能相似 |
暂无描述 | |
IRL530NSPBF | INFINEON |
功能相似 |
HEXFET Power MOSFET ( VDSS=100V , RDS(on)=0.1 | |
IRL520NS | INFINEON |
功能相似 |
HEXFET Power MOSFET |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRL520NSTRLPBF | INFINEON |
获取价格 |
暂无描述 | |
IRL520NSTRR | INFINEON |
获取价格 |
暂无描述 | |
IRL520NSTRRPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Met | |
IRL520PBF | VISHAY |
获取价格 |
Power MOSFET | |
IRL520S | ETC |
获取价格 |
||
IRL520SPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Me | |
IRL520SU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 9.2A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Me | |
IRL521 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 7.9A I(D) | TO-220AB | |
IRL530 | FAIRCHILD |
获取价格 |
Advanced Power MOSFET | |
IRL530 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 13A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta |