Datasheet > IRL2703-031PBF

IRL2703-031PBF

更新时间： 2024-11-25 14:51:39

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关晶体管
页数	文件大小	规格书
9页	113K
描述
Power Field-Effect Transistor, 24A I(D), 30V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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IRL2703-031PBF 数据手册

PD - 9.1359A

IRL2703

HEXFET^®Power MOSFET

l Logic-Level Gate Drive

l Advanced Process Technology

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

V_DSS= 30V

R_DS(on)= 0.04Ω

l Fully Avalanche Rated

I_D= 24A

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve the

lowestpossibleon-resistancepersiliconarea. Thisbenefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

knownfor, providesthedesignerwithanextremelyefficient

device for use in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levelstoapproximately50watts. Thelowthermalresistance

and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.30

V_GS

E_AS

I_AR

Gate-to-Source Voltage

±16

Single Pulse Avalanche Energy

Avalanche Current

4.5

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

5.0

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw.

°C

300 (1.6mm from case)

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Min.

––––

Typ.

––––

0.50

Max.

Units

R_θJC

R_θCS

R_θJA

3.3

––––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

°C/W

––––

8/27/97

12 3 4 5 6 7...9

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