Datasheet > IRL3103D1S

IRL3103D1S

更新时间： 2024-11-20 22:33:39

品牌	Logo	应用领域
英飞凌 - INFINEON		肖特基二极管
页数	文件大小	规格书
7页	129K
描述
FETKY⑩ MOSFET & SCHOTTKY RECTIFIER(Vdss=30V, Rds(on)=0.014ohm, Id=64A)

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IRL3103D1S 数据手册

PD-9.1558A

IRL3103D1S

FETKY^TMMOSFET & SCHOTTKY RECTIFIER

l Co-packagedHEXFET PowerMOSFET

and Schottky Diode

V_DSS= 30V

R_DS(on)= 0.014Ω

I_D= 64A

l Generation5Technology

l LogicLevelGateDrive

l Minimize Circuit Inductance

l IdealForSynchronousRegulatorApplication

Description

The FETKY family of co-packaged HEXFET power

MOSFETs and Schottky Diodes offer the designer an

innovative board space saving solution for switching

regulatorapplications. AlowonresistanceGen5MOSFET

with a low forward voltage drop Schottky diode and

minimized component interconnect inductance and

resistance result in maximized converter efficiencies.

The D²Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

D²Pak is suitable for high current applications because

of its low internal connection resistance and can dissipate

up to 2.0W in a typical surface mount application.

TO -262

Pak

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Power Dissipation

220

3.1

P_D@T_A= 25°C

P_D@T_C= 25°C

Power Dissipation

Linear Derating Factor

0.56

± 16

W/°C

V_GS

T_J

Gate-to-Source Voltage

Operating Junction and

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

1.4

Units

R_θJC

R_θJA

Junction-to-Ambient ( PCB Mounted,steady-state)**

°C/W

4/2/98

12 3 4 5 6 7

中文翻译

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