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IRL3103L PDF预览

IRL3103L

更新时间: 2024-11-20 22:33:39
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 126K
描述
Power MOSFET(Vdss=30V, Rds(on)=12mohm, Id=64A)

IRL3103L 数据手册

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PD - 94162  
IRL3103S  
IRL3103L  
l Advanced Process Technology  
l Surface Mount (IRL3103S)  
l Low-profile through-hole (IRL3103L)  
l 175°C Operating Temperature  
l Fast Switching  
HEXFET® Power MOSFET  
D
VDSS = 30V  
l Fully Avalanche Rated  
RDS(on) = 12mΩ  
Description  
G
AdvancedHEXFET® PowerMOSFETsfromInternational  
Rectifier utilize advanced processing techniques to  
achieve extremely low on-resistance per silicon area.  
This benefit, combined with the fast switching speed and  
ruggedizeddevicedesignthatHEXFETpowerMOSFETs  
are well known for, provides the designer with an  
extremely efficient and reliable device for use in a wide  
variety of applications.  
ID = 64A  
S
The D2Pak is a surface mount power package capable of  
accommodating die sizes up to HEX-4. It provides the  
highest power capability and the lowest possible on-  
resistance in any existing surface mount package. The  
D2Pakissuitableforhighcurrentapplicationsbecauseofits  
low internal connection resistance and can dissipate up to  
2.0W in a typical surface mount application.  
D2Pak  
IRL3103S  
TO-262  
IRL3103L  
The through-hole version (IRL3103L) is available for low-  
profile applications.  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
64  
45  
A
220  
PD @TC = 25°C  
Power Dissipation  
94  
0.63  
W
W/°C  
V
Linear Derating Factor  
VGS  
IAR  
Gate-to-Source Voltage  
± 16  
Avalanche Current  
34  
A
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
22  
mJ  
V/ns  
5.0  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 srew  
°C  
300 (1.6mm from case )  
10 lbfin (1.1Nm)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
1.6  
40  
Units  
RθJC  
RθJA  
°C/W  
Junction-to-Ambient (PCB mount)**  
–––  
www.irf.com  
1
02/14/02  

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