Datasheet > IRL2910N

IRL2910N

更新时间： 2024-09-30 23:59:43

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IRL2910N 数据手册

PD 9.1375

IRL2910

PRELIMINARY

HEXFET^®Power MOSFET

Logic-Level Gate Drive

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

V_DSS= 100V

R_DS(on)= 0.026Ω

I_D= 48A

Fully Avalanche Rated

Description

Fifth Generation HEXFETs from International Rectifier utilize

advanced processing techniques to achieve extremely low on-

resistance per silicon area. This benefit, combined with the fast

switching speed and ruggedized device design for which HEXFET

Power MOSFETs are well known, provides the designer with an

extremely efficient and reliable device for use in a wide variety

of applications.

The TO-220 package is universally preferred for all commercial-

industrialapplicationsatpowerdissipationlevelstoapproximately

50 watts. The low thermal resistance and low package cost of the

TO-220 contribute to its wide acceptance throughout the industry.

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V _GS@ 10V

Pulsed Drain Current

190

P_D@T_C= 25°C

Power Dissipation

150

W/°C

Linear Derating Factor

1.0

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

520

Single Pulse Avalanche Energy

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

7.4

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

Max.

1.0

Units

R_θJC

R_θCS

R_θJA

–––

0.50

–––

°C/W

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

–––

12 3 4 5 6 7 8

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