IRL3102PBF

更新时间： 2024-11-21 04:23:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
7页	131K
描述
HEXFET Power MOSFET

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中文翻译

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数据手册

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IRL3102PBF 数据手册

PD-95658

IRL3102PbF

HEXFET^®Power MOSFET

l Advanced Process Technology

l Optimized for 4.5V-7.0V Gate Drive

l Ideal for CPU Core DC-DC Converters

l Fast Switching

V_DSS= 20V

R_DS(on)= 0.013Ω

l Lead-Free

Description

I_D= 61A

These HEXFET Power MOSFETs were designed

specifically to meet the demands of CPU core DC-DC

converters in the PC environment. Advanced

processing techniques combined with an optimized

gate oxide design results in a die sized specifically to

offer maximum efficiency at minimum cost.

The TO-220 package is universally preferred for all

commercial-industrial applications at power

dissipation levels to approximately 50 watts. The low

thermal resistance and low package cost of the TO-

220 contribute to its wide acceptance throughout the

industry.

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 4.5V

Pulsed Drain Current

240

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.71

± 10

V_GS

Gate-to-Source Voltage

V_GSM

Gate-to-Source Voltage

(Start Up Transient, tp = 100µs)

Single Pulse Avalanche Energy

Avalanche Current

E_AS

I_AR

220

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating

8.9

5.0

V/ns

Junction

and-55

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

°C

300 (1.6mm from case )

10 lbfin (1.1Nm)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

Max.

Units

R_θJC

R_θCS

R_θJA

1.4

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.50

°C/W

07/30/04

12 3 4 5 6 7

中文翻译

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