Datasheet > IRL3103D1

IRL3103D1

更新时间： 2024-11-24 22:06:23

品牌	Logo	应用领域
英飞凌 - INFINEON		肖特基二极管
页数	文件大小	规格书
6页	96K
描述
FETKY⑩ MOSFET & SCHOTTKY RECTIFIER(Vdss=30V, Rds(on)=0.014ohm, Id=64A)

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IRL3103D1 数据手册

PD 9.1608C

IRL3103D1

FETKY^TMMOSFET & SCHOTTKY RECTIFIER

l Copackaged HEXFET Power MOSFET

and Schottky Diode

V_DSS= 30V

R_DS(on)= 0.014Ω

I_D= 64A

l Generation 5 Technology

l Logic Level Gate Drive

l Minimize Circuit Inductance

l Ideal For Synchronous Regulator Application

Description

The FETKY family of copackaged HEXFET power

MOSFETs and Schottky Diodes offer the designer an

innovative board space saving solution for switching

regulator applications. A low on resistance Gen 5

MOSFET with a low forward voltage drop Schottky

diode and minimized component interconnect

inductance and resistance result in maximized

converter efficiencies.

The TO-220 package is universally preferred for all

commercial-industrialapplicationsatpowerdissipation

levels to approximately 50 watts. The low thermal

resistance and low package cost of the TO-220

contribute to its wide acceptance throughout the

industry.

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

220

P_D@T_A= 25°C

P_D@T_C= 25°C

Power Dissipation

2.0

Power Dissipation

Linear Derating Factor

0.56

W/°C

V_GS

T_J

Gate-to-Source Voltage

± 16

Operating Junction and

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

300 (1.6mm from case )

10 lbf•in (1.1N•m)

°C

Thermal Resistance

Parameter

Junction-to-Case

Junction-to-Ambient

Typ.

–––

Max.

1.4

Units

R_θJC

R_θJA

–––

°C/W

12/16/97

12 3 4 5 6

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