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IRL2703-029PBF PDF预览

IRL2703-029PBF

更新时间: 2024-11-25 14:51:39
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 113K
描述
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IRL2703-029PBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.58
其他特性:LOGIC LEVEL COMPATIBLE配置:SINGLE
最小漏源击穿电压:30 V最大漏极电流 (ID):24 A
最大漏源导通电阻:0.04 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRL2703-029PBF 数据手册

 浏览型号IRL2703-029PBF的Datasheet PDF文件第2页浏览型号IRL2703-029PBF的Datasheet PDF文件第3页浏览型号IRL2703-029PBF的Datasheet PDF文件第4页浏览型号IRL2703-029PBF的Datasheet PDF文件第5页浏览型号IRL2703-029PBF的Datasheet PDF文件第6页浏览型号IRL2703-029PBF的Datasheet PDF文件第7页 
PD - 9.1359A  
IRL2703  
HEXFET® Power MOSFET  
l Logic-Level Gate Drive  
l Advanced Process Technology  
l Dynamic dv/dt Rating  
l 175°C Operating Temperature  
l Fast Switching  
D
VDSS = 30V  
RDS(on) = 0.04Ω  
G
l Fully Avalanche Rated  
ID = 24A  
S
Description  
Fifth Generation HEXFETs from International Rectifier  
utilize advanced processing techniques to achieve the  
lowestpossibleon-resistancepersiliconarea. Thisbenefit,  
combined with the fast switching speed and ruggedized  
device design that HEXFET Power MOSFETs are well  
knownfor, providesthedesignerwithanextremelyefficient  
device for use in a wide variety of applications.  
The TO-220 package is universally preferred for all  
commercial-industrial applications at power dissipation  
levelstoapproximately50watts. Thelowthermalresistance  
and low package cost of the TO-220 contribute to its wide  
acceptance throughout the industry.  
TO-220AB  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
24  
17  
A
96  
PD @TC = 25°C  
Power Dissipation  
45  
W
W/°C  
V
Linear Derating Factor  
0.30  
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
±16  
Single Pulse Avalanche Energy ‚  
Avalanche Current  
77  
mJ  
A
14  
4.5  
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
mJ  
V/ns  
5.0  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 screw.  
°C  
300 (1.6mm from case)  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Min.  
––––  
––––  
––––  
Typ.  
––––  
0.50  
Max.  
Units  
RθJC  
RθCS  
RθJA  
3.3  
––––  
62  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
°C/W  
––––  
8/27/97  

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