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IRHM9230 PDF预览

IRHM9230

更新时间： 2024-11-08 22:48:07
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关局域网
页数 文件大小 规格书
4页 160K
描述
TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.8ohm, Id=-6.5A)

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中文翻译

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IRHM9230 技术参数

是否Rohs认证： 不符合生命周期：Active
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.32其他特性：RADIATION HARDENED
配置：SINGLE最小漏源击穿电压：200 V
最大漏极电流 (Abs) (ID)：6.5 A最大漏极电流 (ID)：6.5 A
最大漏源导通电阻：0.8 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-254AAJESD-30 代码：S-MSFM-P3
JESD-609代码：e0元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：METAL
封装形状：SQUARE封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：P-CHANNEL
最大功率耗散 (Abs)：75 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：PIN/PEG
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

IRHM9230 数据手册

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Previous Datasheet  
Index  
Next Data Sheet  
Provisional Data Sheet No. PD-9.1395  
IRHM9230  
P-CHANNEL  
REPETETIVE AVALANCHE AND dv/dt RATED  
HEXFET® TRANSISTOR  
RAD HARD  
Product Summary  
-200 Volt, 0.8Ω, RAD HARD HEXFET  
International Rectifier’s P-Channel RAD HARD technology  
HEXFETs demonstrate excellent threshold voltage stability  
and breakdown voltage stability at total radiation doses as  
high as 105 Rads (Si). Under identical pre- and post-radia-  
tion test conditions, International Rectifier’s P-Channel RAD  
HARD HEXFETs retain identical electrical specifications  
up to 1 x 105 Rads (Si) total dose. No compensation in gate  
drive circuitry is required. These devices are also capable  
of surviving transient ionization pulses as high as 1 x 1012  
Rads (Si)/Sec, and return to normal operation within a few  
microseconds. Single Event Effect (SEE) testing of Inter-  
national Rectifier P-Channel RAD HARD HEXFETs has  
demonstrated virtual immunity to SEE failure. Since the  
P-Channel RAD HARD process utilizes International  
Rectifier’s patented HEXFET technology, the user can ex-  
pect the highest quality and reliability in the industry.  
Part Number  
IRHM9230  
BVDSS  
-200V  
RDS(on)  
ID  
0.8Ω  
-6.5A  
Features:  
■ Radiation Hardened up to 1 x 105 Rads (Si)  
■ Single Event Burnout (SEB) Hardened  
■ Single Event Gate Rupture (SEGR) Hardened  
■ Gamma Dot (Flash X-Ray) Hardened  
■ Neutron Tolerant  
■ Identical Pre- and Post-Electrical Test Conditions  
■ Repetitive Avalanche Rating  
■ Dynamic dv/dt Rating  
P-Channel RAD HARD HEXFET transistors also feature all  
of the well-established advantages of MOSFETs, such as  
voltage control,very fast switching, ease of paralleling and  
temperature stability of the electrical parameters.  
■ Simple Drive Requirements  
■ Ease of Paralleling  
They are well-suited for applications such as switching  
power supplies, motor controls, inverters, choppers, audio  
amplifiers and high-energy pulse circuits in space and weap-  
ons environments.  
■ Hermetically Sealed  
■ Ceramic Eyelets  
■ Electrically Isolated  
Pre-Radiation  
Absolute Maximum Ratings  
Parameter  
IRHM9230  
-6.5  
Units  
I
@ V  
@ V  
= -12V, T = 25°C Continuous Drain Current  
GS C  
D
I
D
= -12V, T = 100°C Continuous Drain Current  
C
-4.1  
A
GS  
I
Pulsed Drain Current   
-26  
DM  
@ T = 25°C  
P
D
Max. Power Dissipation  
75  
W
W/K ꢀ  
V
C
Linear Derating Factor  
0.2  
V
GS  
Gate-to-Source Voltage  
±20  
E
Single Pulse Avalanche Energy‚  
Avalanche Current   
330  
mJ  
AS  
I
-6.5  
A
AR  
E
Repetitive Avalanche Energy‚  
Peak Diode Recovery dv/dt ƒ  
Operating Junction  
7.5  
mJ  
AR  
dv/dt  
-5.0  
V/ns  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
Lead Temperature  
Weight  
300 (0.063 in. (1 .6mm) from case for 10s)  
9.3 (typical)  
Notes: See page 4  
To Order  
 
 
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