IRHE7110

更新时间： 2024-02-23 20:31:32

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
12页	320K
描述
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR

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中文翻译

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技术参数
数据手册

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IRHE7110 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.68
Base Number Matches：	1

IRHE7110 数据手册

PD - 90732B

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET^®TRANSISTOR

IRHE7110

IRHE8110

N CHANNEL

MEGA HARD RAD

Product Summary

100Volt, 0.60Ω, MEGA RAD HARD HEXFET

International Rectifier’s RAD HARD technology

HEXFETs demonstrate excellent threshold voltage

stability and breakdown voltage stability at total

radiaition doses as high as 1x10⁶Rads(Si). Under

identical pre- and post-irradiation test conditions, In-

ternational Rectifier’s RAD HARD HEXFETs retain

identical electrical specifications up to 1 x 10⁵Rads

(Si) total dose. No compensation in gate drive circuitry

is required. These devices are also capable of surviv-

ing transient ionization pulses as high as 1 x 10¹²Rads

(Si)/Sec, and return to normal operation within a few

microseconds. Since the RAD HARD process utilizes

International Rectifier’s patented HEXFET technology,

the user can expect the highest quality and reliability

in the industry.

Part Number

IRHE7110

IRHE8110

BVDSS

100V

RDS(on)

0.60Ω

3.5A

Features:

Radiation Hardened up to 1 x 10⁶Rads (Si)

Single Event Burnout (SEB) Hardened

Single Event Gate Rupture (SEGR) Hardened

Gamma Dot (Flash X-Ray) Hardened

Neutron Tolerant

Identical Pre- and Post-Electrical Test Conditions

Repetitive Avalanche Rating

Dynamic dv/dt Rating

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

RAD HARD HEXFET transistors also feature all of

the well-established advantages of MOSFETs, such

as voltage control, very fast switching, ease of paral-

leling and temperature stability of the electrical pa-

rameters. They are well-suited for applications such

as switching power supplies, motor controls, invert-

ers, choppers, audio amplifiers and high-energy

pulse circuits in space and weapons environments.

Surface Mount

Light Weight

Pre-Irradiation

Absolute Maximum Ratings

Parameter

IRHE7130, IRHE8130

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

3.5

= 12V, T = 100°C Continuous Drain Current

2.2

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

@ T = 25°C

W/°C

0.12

±20

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

dv/dt

5.5

V/ns

-55 to 150

^oC

Storage Temperature Range

STG

Lead Temperature

Weight

300 (0.063 in. (1.6mm) from case for 10s)

0.42 (typical)

www.irf.com

10/14/98

12 3 4 5 6 7...12

中文翻译

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与IRHE7110相关器件

型号	品牌	获取价格	描述	数据表
IRHE7110PBF	INFINEON	获取价格	Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Me
IRHE7130	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFCACE MOUNT(LCC-18)
IRHE7130SCS	INFINEON	获取价格	Power Field-Effect Transistor, 8A I(D), 100V, 0.185ohm, 1-Element, N-Channel, Silicon, Met
IRHE7230	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)
IRHE7230SCS	INFINEON	获取价格	暂无描述
IRHE7230SCSPBF	INFINEON	获取价格	Power Field-Effect Transistor, 5.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Me
IRHE8110	INFINEON	获取价格	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
IRHE8110PBF	INFINEON	获取价格	暂无描述
IRHE8130	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFCACE MOUNT(LCC-18)
IRHE8230	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)

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