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IRHE9230SCSPBF PDF预览

IRHE9230SCSPBF

更新时间： 2024-11-05 13:08:51
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲
页数 文件大小 规格书
8页 109K
描述
Power Field-Effect Transistor, 4A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, LCC-18

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IRHE9230SCSPBF 数据手册

 浏览型号IRHE9230SCSPBF的Datasheet PDF文件第2页浏览型号IRHE9230SCSPBF的Datasheet PDF文件第3页浏览型号IRHE9230SCSPBF的Datasheet PDF文件第4页浏览型号IRHE9230SCSPBF的Datasheet PDF文件第5页浏览型号IRHE9230SCSPBF的Datasheet PDF文件第6页浏览型号IRHE9230SCSPBF的Datasheet PDF文件第7页 
PD - 91804D  
IRHE9230  
200V, P-CHANNEL  
REF: MIL-PRF-19500/630  
RAD-Hard™ HEXFET®  
MOSFETTECHNOLOGY  
RADIATION HARDENED  
POWER MOSFET  
SURFACE MOUNT (LCC-18)  
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
QPL Part Number  
IRHE9230  
100K Rads (Si)  
300K Rads (Si)  
0.80Ω  
0.80Ω  
-4.0A JANSR2N7390U  
-4.0A JANSF2N7390U  
IRHE93230  
International Rectifier’s RAD-HardTM HEXFET® MOSFET  
technology provides high performance power MOSFETs  
for space applications. This technology has over a de-  
cade of proven performance and reliability in satellite  
applications. These devices have been characterized  
for both Total Dose and Single Event Effects (SEE). The  
combination of low Rdson and low gate charge reduces  
the power losses in switching applications such as DC to  
DC converters and motor control. These devices retain  
all of the well established advantages of MOSFETs such  
as voltage control, fast switching, ease of paralleling and  
temperature stability of electrical parameters.  
LCC - 18  
Features:  
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Low RDS(on)  
Low Total Gate Charge  
Proton Tolerant  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Ceramic Package  
Surface Mount  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
-4.0  
D
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
-2.4  
-16  
D
GS  
C
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
DM  
@ T = 25°C  
P
25  
W
W/°C  
V
D
C
Linear Derating Factor  
0.2  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy ➁  
Avalanche Current ➀  
±20  
GS  
E
171  
mJ  
A
AS  
I
-4.0  
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➂  
Operating Junction  
2.5  
mJ  
V/ns  
AR  
dv/dt  
-27  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
Pckg. Mounting Surface Temp.  
Weight  
300 ( for 5s)  
0.42 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
3/1/00  
12345678

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