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IRHF4130PBF PDF预览

IRHF4130PBF

更新时间： 2024-11-05 21:17:07
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
12页 300K
描述
Power Field-Effect Transistor, 8A I(D), 100V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, CERAMIC, MODIFIED TO-39, 3 PIN

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IRHF4130PBF 数据手册

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PD - 90653F  
IRHF7130  
JANSR2N7261  
100V, N-CHANNEL  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE (TO-39)  
REF: MIL-PRF-19500/601  
RAD Hard™ HEXFET® TECHNOLOGY  
Product Summary  
Part Number Radiation Level  
RDS(on)  
ID  
QPL Part Number  
IRHF7130  
IRHF3130  
IRHF4130  
IRHF8130  
100K Rads (Si)  
300K Rads (Si)  
500K Rads (Si)  
1000K Rads (Si)  
0.18Ω 8.0A JANSR2N7261  
0.18Ω 8.0A JANSF2N7261  
0.18Ω 8.0A JANSG2N7261  
0.18Ω 8.0A JANSH2N7261  
International Rectifier’s RADHard HEXFET® technology  
provides high performance power MOSFETs for  
space applications. This technology has over a  
decade of proven performance and reliability in  
satellite applications. These devices have been  
characterized for both Total Dose and Single Event  
Effects (SEE). The combination of low Rdson and  
low gate charge reduces the power losses in  
switching applications such as DC to DC converters  
and motor control. These devices retain all of the well  
established advantages of MOSFETs such as voltage  
control, fast switching, ease of paralleling and  
temperature stability of electrical parameters.  
TO-39  
Features:  
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Low RDS(on)  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Ceramic Package  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C Continuous Drain Current  
8.0  
D
D
GS  
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
5.0  
32  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
Linear Derating Factor  
DM  
@ T = 25°C  
P
25  
W
W/°C  
V
D
C
0.20  
±20  
130  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
GS  
E
mJ  
A
AS  
I
AR  
8.0  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
mJ  
V/ns  
AR  
dv/dt  
2.5  
5.5  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
300 (0.063 in.(1.6mm) from case for 10s)  
0.98 (Typical)  
Lead Temperature  
Weight  
For footnotes refer to the last page  
www.irf.com  
1
04/28/06  
1234567...12

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