R
A
D
H
a
r
d
H
E
X
F
E
T
T
E
C
H
N
O
L
O
G
Y
Absolute Maximum Ratings
Parameter
PD - 90671D
IRHF7110
100V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
®
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHF7110
IRHF3110
IRHF4110
IRHF8110
100K Rads (Si)
300K Rads (Si)
600K Rads (Si)
0.60Ω
0.60Ω
0.60Ω
3.5A
3.5A
3.5A
3.5A
1000K Rads (Si) 0.60Ω
TO-39
International Rectifiers RADHard HEXFET® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
!
!
!
!
!
!
!
!
!
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Pre-Irradiation
Units
I
@ V
@ V
= 12V, T = 25°C Continuous Drain Current
C
3.5
2.2
14
D
GS
A
I
= 12V, T = 100°C Continuous Drain Current
C
D
GS
I
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
DM
P
@ T = 25°C
C
15
W
W/°C
V
D
0.12
±20
68
V
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
mJ
A
AS
I
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
mJ
V/ns
AR
dv/dt
5.5
T
-55 to 150
J
T
Storage Temperature Range
oC
STG
300 ( 0.063 in.(1.6mm) from case for 10s)
0.98 (Typical )
Lead Temperature
Weight
g
For footnotes refer to the last page
www.irf.com
1
8/10/01