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IRHF53130PBF PDF预览

IRHF53130PBF

更新时间： 2024-11-05 13:08:51
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
8页 116K
描述
Power Field-Effect Transistor, 11.7A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN

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IRHF53130PBF 数据手册

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PD - 93789A  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE (TO-39)  
IRHF57130  
100V, N-CHANNEL  
TECHNOLOGY  
R
5
™
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
IRHF57130  
IRHF53130  
IRHF54130  
IRHF58130  
100K Rads (Si)  
300K Rads (Si)  
600K Rads (Si)  
0.08Ω 11.7A  
0.08Ω 11.7A  
0.08Ω 11.7A  
1000K Rads (Si) 0.10Ω 11.7A  
TO-39  
International Rectifier’s R5TM technology provides  
high performance power MOSFETs for space appli-  
cations. These devices have been characterized for  
Single Event Effects (SEE) with useful performance  
up to an LET of 80 (MeV/(mg/cm2)). The combination  
of low RDS(on) and low gate charge reduces the power  
losses in switching applications such as DC to DC  
converters and motor control. These devices retain  
all of the well established advantages of MOSFETs  
such as voltage control, fast switching, ease of paral-  
leling and temperature stability of electrical param-  
eters.  
Features:  
n Single Event Effect (SEE) Hardened  
n Ultra Low RDS(on)  
n Neutron Tolerant  
n Identical Pre- and Post-Electrical Test Conditions  
n Repetitive Avalanche Ratings  
n
Dynamic dv/dt Ratings  
n Simple Drive Requirements  
n Ease of Paralleling  
n Hermetically Sealed  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
11.7  
7.4  
47  
D
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
D
GS  
C
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
DM  
@ T = 25°C  
P
25  
W
W/°C  
V
D
C
0.2  
±20  
V
GS  
E
Single Pulse Avalanche Energy ➁  
Avalanche Current ➀  
173  
11.7  
mJ  
A
AS  
I
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➂  
Operating Junction  
2.5  
mJ  
V/ns  
AR  
dv/dt  
4.9  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
STG  
Lead Temperature  
Weight  
300 (0.063 in./1.6mm from case for 10s)  
0.98 (Typical)  
g
For footnotes refer to the last page  
www.irf.com  
1
3/2/00  
12345678

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