Datasheet > IRHE8110PBF

IRHE8110PBF

更新时间： 2024-09-24 19:32:23

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英飞凌 - INFINEON		/
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IRHE8110PBF 数据手册

PD - 90732E

IRHE7110

100V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT(LCC-18)

RAD Hard^™HEXFET^®TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

IRHE7110

IRHE3110

IRHE4110

IRHE8110

100K Rads (Si) 0.60Ω

300K Rads (Si) 0.60Ω

600K Rads (Si) 0.60Ω

1000K Rads (Si) 0.60Ω

3.5A

LCC-18

International Rectifier’s RADHard HEXFET^®technol-

ogy provides high performance power MOSFETs for

space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been character-

ized for bothTotal Dose and Single Event Effects (SEE).

The combination of low Rdson and low gate charge

reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages

of MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of elec-

trical parameters.

Features:

Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C Continuous Drain Current

3.5

= 12V, T = 100°C Continuous Drain Current

2.2

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

@ T = 25°C

W/°C

0.12

±20

Gate-to-Source Voltage

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

—

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

—

V/ns

dv/dt

5.5

-55 to 150

Storage Temperature Range

^oC

STG

Package Mounting Surface Temperature

Weight

300 ( for 5s)

0.42 (Typical )

For footnotes refer to the last page

www.irf.com

04/15/02

12 3 4 5 6 7...12

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