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IRHE9110

更新时间: 2024-11-05 04:23:11
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
8页 201K
描述
POWER MOSFET 100V - P CHANNEL SURFACE MOUNT (LCC-18)

IRHE9110 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:CERAMIC, LCC-18Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.33
雪崩能效等级(Eas):75 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):2.3 A
最大漏极电流 (ID):2.3 A最大漏源导通电阻:1.1 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-CDSO-F18
JESD-609代码:e0元件数量:1
端子数量:18工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):15 W最大脉冲漏极电流 (IDM):9.2 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:TIN LEAD
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRHE9110 数据手册

 浏览型号IRHE9110的Datasheet PDF文件第2页浏览型号IRHE9110的Datasheet PDF文件第3页浏览型号IRHE9110的Datasheet PDF文件第4页浏览型号IRHE9110的Datasheet PDF文件第5页浏览型号IRHE9110的Datasheet PDF文件第6页浏览型号IRHE9110的Datasheet PDF文件第7页 
PD-97180  
RADIATION HARDENED  
POWER MOSFET  
SURFACE MOUNT (LCC-18)  
IRHE9110  
100V - P CHANNEL  
TM  
RAD-Hard HEXFET TECHNOLOGY  
®
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
IRHE9110  
100K Rads (Si)  
300K Rads (Si)  
1.1Ω  
1.1Ω  
-2.3A  
-2.3A  
IRHE93110  
LCC - 18  
International Rectifier’s RAD-HardTM HEXFET®  
technology provides high performance power MOSFETs  
for space applications. This technology has over a  
decade of proven performance and reliability in satellite  
applications. These devices have been characterized  
for both Total Dose and Single Event Effects (SEE). The  
combination of low Rdson and low gate charge reduces  
the power losses in switching applications such as DC to  
DC converters and motor control. These devices retain  
all of the well established advantages of MOSFETs such  
as voltage control, fast switching, ease of paralleling and  
temperature stability of electrical parameters.  
Features:  
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Low RDS(on)  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Ceramic Package  
Surface Mount  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= -12V, T =25°C Continuous Drain Current  
-2.3  
-1.5  
D
D
GS  
GS  
C
A
I
= -12V, T =100°C Continuous Drain Current  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
Linear Derating Factor  
-9.2  
DM  
@ T = 25°C  
P
D
15  
W
W/°C  
V
C
0.1  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
±20  
GS  
E
75  
mJ  
A
AS  
I
-2.3  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
1.5  
mJ  
V/ns  
AR  
dv/dt  
-12.5  
-55 to 150  
T
J
T
Storage Temperature Range  
°C  
g
STG  
Pckg. Mounting Surface Temp.  
Weight  
300 (for 5s)  
0.42 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
07/11/07  

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