是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | CERAMIC, LCC-18 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.33 |
雪崩能效等级(Eas): | 75 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (Abs) (ID): | 2.3 A |
最大漏极电流 (ID): | 2.3 A | 最大漏源导通电阻: | 1.1 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-CDSO-F18 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 18 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 15 W | 最大脉冲漏极电流 (IDM): | 9.2 A |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | FLAT | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHE9110SCS | INFINEON |
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Rad hard, -100V, -2.3A, single, P-channel MOSFET, R4 in an 18-pin LCC package - 18-pin LCC | |
IRHE9130 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) | |
IRHE9130SCS | INFINEON |
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Power Field-Effect Transistor, 6.5A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Me | |
IRHE9130SCSPBF | INFINEON |
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Power Field-Effect Transistor, 6.5A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Me | |
IRHE9230 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) | |
IRHE9230PBF | INFINEON |
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Power Field-Effect Transistor, 4A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Meta | |
IRHE9230SCSPBF | INFINEON |
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Power Field-Effect Transistor, 4A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Meta | |
IRHE93110 | INFINEON |
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POWER MOSFET 100V - P CHANNEL SURFACE MOUNT (LCC-18) | |
IRHE93130 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) | |
IRHE93130PBF | INFINEON |
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暂无描述 |