5秒后页面跳转
捷配首页

Datasheet > 晶体管 > 功率场效应晶体管> IRHE8110
IRHE8110 PDF预览

IRHE8110

更新时间： 2024-09-24 04:23:11
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
12页 320K
描述
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR

阅读下载

中文翻译

获取价格

IRHE8110 技术参数

是否Rohs认证： 不符合生命周期：Active
包装说明：LCC-18Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.21
Is Samacsys：N其他特性：HIGH RELIABILITY
雪崩能效等级（Eas）：68 mJ外壳连接：SOURCE
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：100 V
最大漏极电流 (Abs) (ID)：3.1 A最大漏极电流 (ID)：3.5 A
最大漏源导通电阻：0.69 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-CQCC-N18JESD-609代码：e0
元件数量：1端子数量：18
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：CHIP CARRIER峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：11 W
最大脉冲漏极电流 (IDM)：14 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)端子形式：NO LEAD
端子位置：QUAD处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

IRHE8110 数据手册

 浏览型号IRHE8110的Datasheet PDF文件第2页浏览型号IRHE8110的Datasheet PDF文件第3页浏览型号IRHE8110的Datasheet PDF文件第4页浏览型号IRHE8110的Datasheet PDF文件第5页浏览型号IRHE8110的Datasheet PDF文件第6页浏览型号IRHE8110的Datasheet PDF文件第7页 
PD - 90732B  
REPETITIVE AVALANCHE AND dv/dt RATED  
HEXFET® TRANSISTOR  
IRHE7110  
IRHE8110  
N CHANNEL  
MEGA HARD RAD  
Product Summary  
100Volt, 0.60Ω, MEGA RAD HARD HEXFET  
International Rectifier’s RAD HARD technology  
HEXFETs demonstrate excellent threshold voltage  
stability and breakdown voltage stability at total  
radiaition doses as high as 1x106 Rads(Si). Under  
identical pre- and post-irradiation test conditions, In-  
ternational Rectifier’s RAD HARD HEXFETs retain  
identical electrical specifications up to 1 x 105 Rads  
(Si) total dose. No compensation in gate drive circuitry  
is required. These devices are also capable of surviv-  
ing transient ionization pulses as high as 1 x 1012 Rads  
(Si)/Sec, and return to normal operation within a few  
microseconds. Since the RAD HARD process utilizes  
International Rectifier’s patented HEXFET technology,  
the user can expect the highest quality and reliability  
in the industry.  
Part Number  
IRHE7110  
IRHE8110  
BVDSS  
100V  
100V  
RDS(on)  
0.60Ω  
0.60Ω  
ID  
3.5A  
3.5A  
Features:  
n
n
n
n
n
n
n
n
n
n
n
n
n
Radiation Hardened up to 1 x 106 Rads (Si)  
Single Event Burnout (SEB) Hardened  
Single Event Gate Rupture (SEGR) Hardened  
Gamma Dot (Flash X-Ray) Hardened  
Neutron Tolerant  
Identical Pre- and Post-Electrical Test Conditions  
Repetitive Avalanche Rating  
Dynamic dv/dt Rating  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
RAD HARD HEXFET transistors also feature all of  
the well-established advantages of MOSFETs, such  
as voltage control, very fast switching, ease of paral-  
leling and temperature stability of the electrical pa-  
rameters. They are well-suited for applications such  
as switching power supplies, motor controls, invert-  
ers, choppers, audio amplifiers and high-energy  
pulse circuits in space and weapons environments.  
Surface Mount  
Light Weight  
Pre-Irradiation  
Absolute Maximum Ratings  
Parameter  
IRHE7130, IRHE8130  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
3.5  
D
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
2.2  
D
GS  
C
I
Pulsed Drain Current ‚  
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
14  
DM  
@ T = 25°C  
P
15  
W
W/°C  
V
D
C
0.12  
±20  
V
GS  
E
Single Pulse Avalanche Energy ƒ  
Peak Diode Recovery dv/dt „  
Operating Junction  
68  
mJ  
AS  
dv/dt  
5.5  
V/ns  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
Lead Temperature  
Weight  
300 (0.063 in. (1.6mm) from case for 10s)  
0.42 (typical)  
www.irf.com  
1
10/14/98  
1234567...12

中文翻译

下载PDF

与IRHE8110相关器件

型号 品牌 获取价格 描述 数据表
IRHE8110PBF INFINEON

获取价格

 		暂无描述
IRHE8130 INFINEON

获取价格

 		RADIATION HARDENED POWER MOSFET SURFCACE MOUNT(LCC-18)
IRHE8230 INFINEON

获取价格

 		RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)
IRHE8230PBF INFINEON

获取价格

 		Power Field-Effect Transistor, 5.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Me
IRHE9110 INFINEON

获取价格

 		POWER MOSFET 100V - P CHANNEL SURFACE MOUNT (LCC-18)
IRHE9110SCS INFINEON

获取价格

 		Rad hard, -100V, -2.3A, single, P-channel MOSFET, R4 in an 18-pin LCC package - 18-pin LCC
IRHE9130 INFINEON

获取价格

 		RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)
IRHE9130SCS INFINEON

获取价格

 		Power Field-Effect Transistor, 6.5A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Me
IRHE9130SCSPBF INFINEON

获取价格

 		Power Field-Effect Transistor, 6.5A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Me
IRHE9230 INFINEON

获取价格

 		RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)

与IRHE8110相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证