是否Rohs认证: | 不符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.38 | Is Samacsys: | N |
雪崩能效等级(Eas): | 500 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (Abs) (ID): | 45 A | 最大漏极电流 (ID): | 45 A |
最大漏源导通电阻: | 0.028 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-204AE | JESD-30 代码: | O-MBFM-P2 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 150 W | 最大脉冲漏极电流 (IDM): | 210 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | PIN/PEG | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRH4054PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 45A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Met | |
IRH4130 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta | |
IRH4150 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204) | |
IRH4230 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET THRU-HORE (TO-204AA/AE) | |
IRH4230PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Meta | |
IRH4250 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Met | |
IRH450 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 10A I(D) | TO-204AE | |
IRH-5/30-T110N-C | MURATA |
获取价格 |
民用设备,工业设备 | |
IRH-5/30-T110NF-C | MURATA |
获取价格 |
民用设备,工业设备 | |
IRH-5/30-T110NVF-C | MURATA |
获取价格 |
民用设备,工业设备 |