IRH7450SE

更新时间： 2024-02-04 07:31:00

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
4页	108K
描述
TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.51ohm, Id=11A)

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IRH7450SE 技术参数

是否Rohs认证：	不符合	生命周期：	Active
包装说明：	FLANGE MOUNT, O-MBFM-P2	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.75
Is Samacsys：	N	雪崩能效等级（Eas）：	500 mJ
外壳连接：	DRAIN	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	500 V	最大漏极电流 (ID)：	12 A
最大漏源导通电阻：	0.57 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-204AE	JESD-30 代码：	O-MBFM-P2
元件数量：	1	端子数量：	2
工作模式：	ENHANCEMENT MODE	封装主体材料：	METAL
封装形状：	ROUND	封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	N-CHANNEL
最大脉冲漏极电流 (IDM)：	48 A	表面贴装：	NO
端子形式：	PIN/PEG	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

IRH7450SE 数据手册

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Provisional Data Sheet No. PD 9.1390

IRH7450SE

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET^®TRANSISTOR

N-CHANNEL

SINGLE EVENT EFFECT (SEE) RAD HARD

500 Volt, 0.51Ω, (SEE) RAD HARD HEXFET

Product Summary

Part Number

International Rectifier’s (SEE) RAD HARD technology

HEXFETs demonstrate virtual immunity to SEE fail-

ure.Additionally, under identical pre- and post-radia-

tion test conditions, International Rectifier’s RAD HARD

HEXFETs retain identical electrical specifications up

to 1 x 10⁵Rads (Si) total dose. No compensation in

gate drive circuitry is required.These devices are also

capable of surviving transient ionization pulses as high

as 1 x 10¹²Rads (Si)/Sec, and return to normal opera-

tion within a few microseconds. Since the (SEE) pro-

cess utilizes International Rectifier’s patented HEXFET

technology, the user can expect the highest quality and

reliability in the industry.

BVDSS

RDS(on)

IRH7450SE

500V

0.51Ω

11A

Features:

Radiation Hardened up to 1 x 10⁵Rads (Si)

Single Event Burnout (SEB) Hardened

Single Event Gate Rupture (SEGR) Hardened

Gamma Dot (Flash X-Ray) Hardened

Neutron Tolerant

Identical Pre- and Post-Electrical Test Conditions

Repetitive Avalanche Rating

Dynamic dv/dt Rating

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

RAD HARD HEXFET transistors also feature all of

the well-established advantages of MOSFETs, such

as voltage control, very fast switching, ease of paral-

leling and temperature stability of the electrical pa-

rameters.

They are well-suited for applications such as switch-

ing power supplies, motor controls, inverters, chop-

pers, audio amplifiers and high-energy pulse circuits

in space and weapons environments.

Absolute Maximum Ratings

Pre-Radiation

Parameter

IRH7450SE

Units

@ V

= 12V, T = 25°C Continuous Drain Current

@ V

= 12V, T = 100°C Continuous Drain Current

7.0

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

@ T = 25°C

150

1.2

W/K ꢀ

±20

500

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

dv/dt

3.5

V/ns

-55 to 150

Storage Temperature Range

^oC

STG

(0.0063 in. (1.6mm) from case for 10 sec.)

11.5 (typical)

Lead Temperature

Weight

300

To Order

12 3 4

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