IRH7150SCSPBF

更新时间： 2024-02-27 21:13:48

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
12页	277K
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IRH7150SCSPBF 数据手册

PD - 90677D

IRH7150

100V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (T0-204)

RAD Hard^™HEXFET^®TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

IRH7150

IRH3150

IRH4150

IRH8150

100K Rads (Si) 0.065Ω

300K Rads (Si) 0.065Ω

600K Rads (Si) 0.065Ω

1000K Rads (Si) 0.065Ω

34A

TO-204AE

International Rectifier’s RADHard HEXFET^®technol-

ogy provides high performance power MOSFETs for

space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been character-

ized for bothTotal Dose and Single Event Effects (SEE).

The combination of low Rdson and low gate charge

reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages

of MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of elec-

trical parameters.

Features:

Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

= 12V, T = 100°C Continuous Drain Current

136

Pulsed Drain Current ➀

Max. Power Dissipation

@ T = 25°C

150

W/°C

Linear Derating Factor

1.2

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

500

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

V/ns

dv/dt

5.5

-55 to 150

Storage Temperature Range

^oC

STG

300 ( 0.063 in.(1.6mm) from case for 10s)

11.5 (Typical )

Lead Temperature

Weight

For footnotes refer to the last page

www.irf.com

03/21/01

12 3 4 5 6 7...12

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