Datasheet > 晶体管 > IGBT> IRG4BC30UPBF

IRG4BC30UPBF

更新时间： 2024-11-21 04:44:35

品牌	Logo	应用领域
英飞凌 - INFINEON		双极性晶体管
页数	文件大小	规格书
8页	587K
描述
UltraFast Speed IGBT

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中文翻译

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数据手册
替代型号

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IRG4BC30UPBF 数据手册

PD - 95169

IRG4BC30UPbF

UltraFast Speed IGBT

INSULATEDGATEBIPOLARTRANSISTOR

Features

• UltraFast: optimized for high operating

frequencies 8-40 kHz in hard switching, >200

kHz in resonant mode

V_CES=600V

• Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

Generation 3

• Industry standard TO-220AB package

• Lead-Free

_{CE(on) typ.}= 1.95V

@V_GE= 15V, I_C= 12A

n-channel

Benefits

• Generation 4 IGBTs offer highest efficiency available

• IGBTs optimized for specified application conditions

• Designed to be a "drop-in" replacement for equivalent

industry-standard Generation 3 IR IGBTs

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Breakdown Voltage

Continuous Collector Current

Pulsed Collector Current

600

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

I_LM

Clamped Inductive Load Current

Gate-to-Emitter Voltage

V_GE

± 20

E_ARV

Reverse Voltage Avalanche Energy

Maximum Power Dissipation

100

P_D@ T_C= 25°C

P_D@ T_C= 100°C

Maximum Power Dissipation

T_J

Operating Junction and

-55 to + 150

T_STG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw.

300 (0.063 in. (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

1.2

Units

°C/W

R_θJC

R_θCS

R_θJA

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient, typical socket mount

Weight

0.50

–––

2 (0.07)

–––

g (oz)

www.irf.com

04/22/04

12 3 4 5 6 7 8

中文翻译

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IRG4BC30UPBF 替代型号

型号	品牌	替代类型	描述	数据表
IRG4BC30UDPBF	INFINEON	完全替代	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT
IRG4BC30U	INFINEON	完全替代	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
IGW60T120	INFINEON	功能相似	Low Loss IGBT in Trench and Fieldstop technology

与IRG4BC30UPBF相关器件

型号	品牌	获取价格	描述	数据表
IRG4BC30US	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT(Vces=600V, Vce(on)typ. = 1.95V, @Vg
IRG4BC30U-S	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT(Vces=600V, Vce(on)typ. = 1.95V, @Vg
IRG4BC30U-SPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC30U-STRL	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3
IRG4BC30U-STRLPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC,
IRG4BC30U-STRRPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC,
IRG4BC30W	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
IRG4BC30W_04	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
IRG4BC30WPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
IRG4BC30WS	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.10V, @Vge=15V, Ic=12A)

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