Datasheet > 晶体管 > IGBT> IRG4BC30W-STRR

IRG4BC30W-STRR

更新时间： 2024-11-21 13:02:47

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管栅
页数	文件大小	规格书
8页	168K
描述
Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3

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数据手册

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IRG4BC30W-STRR 数据手册

PD - 91450B

IRG4BC30F

Fast Speed IGBT

INSULATED GATE BIPOLAR TRANSISTOR

Features

• Fast: optimized for medium operating

frequencies ( 1-5 kHz in hard switching, >20

kHz in resonant mode).

V_CES=600V

• Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

Generation 3

V_{CE(on) typ.}= 1.59V

@V_GE= 15V, I_C= 17A

• Industry standard TO-220AB package

n-channel

Benefits

• Generation 4 IGBTs offer highest efficiency available

• IGBTs optimized for specified application conditions

• Designed to be a "drop-in" replacement for equivalent

industry-standard Generation 3 IR IGBTs

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Breakdown Voltage

Continuous Collector Current

Pulsed Collector Current

600

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

120

I_LM

Clamped Inductive Load Current

Gate-to-Emitter Voltage

120

V_GE

E_ARV

Reverse Voltage Avalanche Energy

Maximum Power Dissipation

100

P_D@ T_C= 25°C

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to + 150

T_STG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw.

300 (0.063 in. (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

1.2

Units

°C/W

g (oz)

R_θJC

R_θCS

R_θJA

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient, typical socket mount

Weight

0.5

–––

2.0 (0.07)

–––

www.irf.com

4/17/2000

12 3 4 5 6 7 8

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