IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L
www.vishay.com
Vishay Siliconix
Power MOSFET
FEATURES
• Advanced process technology
• Surface mount
• Low-profile through-hole (IRFZ34L, SiHFZ34L)
• 175 °C operating temperature
• Fast switching
PRODUCT SUMMARY
VDS (V)
DS(on) ()
Qg (Max.) (nC)
60
R
VGS = 10 V
0.050
Available
46
11
Q
gs (nC)
gd (nC)
Available
Q
22
• Material categorization: for definitions of
compliance
please
see
Configuration
Single
www.vishay.com/doc?99912
Note
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
D
*
D2PAK (TO-263)
I2PAK (TO-262)
DESCRIPTION
G
G
D
S
Third generation power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
D
S
G
S
N-Channel MOSFET
The D2PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2 W in a typical surface mount application.
The through-hole version (IRFZ34L, SiHFZ34L) is available
for low-profile applications.
ORDERING INFORMATION
Package
D2PAK (TO-263)
SiHFZ34S-GE3
IRFZ34SPbF
D2PAK (TO-263)
I2PAK (TO-262)
SiHFZ34L-GE3
IRFZ34LPbF
Lead (Pb)-free and halogen-free
Lead (Pb)-free
SiHFZ34STRL-GE3
IRFZ34STRLPbF a
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
60
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
V
VGS
20
T
C = 25 °C
30
Continuous Drain Current
VGS at 10 V
ID
TC = 100 °C
21
A
Pulsed Drain Current a, e
IDM
120
Linear Derating Factor
Single Pulse Avalanche Energy b, e
0.59
200
W/°C
mJ
EAS
PD
T
C = 25 °C
88
Maximum Power Dissipation
W
V/ns
°C
TA = 25 °C
3.7
Peak Diode Recovery dV/dt c, e
dV/dt
4.5
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature) d
TJ, Tstg
-55 to +175
300
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, Starting TJ = 25 °C, L = 260 μH, Rg = 25 , IAS = 30 A (see fig. 12).
c. ISD 30 A, dI/dt 200 A/μs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
e. Uses IRFZ34, SiHFZ34 data and test conditions.
S15-1659-Rev. D, 20-Jul-15
Document Number: 90368
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000