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IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L PDF预览

IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L

更新时间: 2024-11-03 14:53:31
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威世 - VISHAY /
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11页 415K
描述
Power MOSFET

IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L 数据手册

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IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L  
www.vishay.com  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• Advanced process technology  
• Surface mount  
• Low-profile through-hole (IRFZ34L, SiHFZ34L)  
• 175 °C operating temperature  
• Fast switching  
PRODUCT SUMMARY  
VDS (V)  
DS(on) ()  
Qg (Max.) (nC)  
60  
R
VGS = 10 V  
0.050  
Available  
46  
11  
Q
gs (nC)  
gd (nC)  
Available  
Q
22  
• Material categorization: for definitions of  
compliance  
please  
see  
Configuration  
Single  
www.vishay.com/doc?99912  
Note  
This datasheet provides information about parts that are  
RoHS-compliant and / or parts that are non-RoHS-compliant. For  
example, parts with lead (Pb) terminations are not RoHS-compliant.  
Please see the information / tables in this datasheet for details.  
D
*
D2PAK (TO-263)  
I2PAK (TO-262)  
DESCRIPTION  
G
G
D
S
Third generation power MOSFETs from Vishay utilize  
advanced processing techniques to achieve extremely low  
on-resistance per silicon area. This benefit, combined with  
the fast switching speed and ruggedized device design that  
Power MOSFETs are well known for, provides the designer  
with an extremely efficient and reliable device for use in a  
wide variety of applications.  
D
S
G
S
N-Channel MOSFET  
The D2PAK is a surface mount power package capable of  
accommodating die sizes up to HEX-4. It provides the  
highest power capability and the lowest possible  
on-resistance in any existing surface mount package. The  
D2PAK is suitable for high current applications because of  
its low internal connection resistance and can dissipate up  
to 2 W in a typical surface mount application.  
The through-hole version (IRFZ34L, SiHFZ34L) is available  
for low-profile applications.  
ORDERING INFORMATION  
Package  
D2PAK (TO-263)  
SiHFZ34S-GE3  
IRFZ34SPbF  
D2PAK (TO-263)  
I2PAK (TO-262)  
SiHFZ34L-GE3  
IRFZ34LPbF  
Lead (Pb)-free and halogen-free  
Lead (Pb)-free  
SiHFZ34STRL-GE3  
IRFZ34STRLPbF a  
Note  
a. See device orientation.  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
60  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
20  
T
C = 25 °C  
30  
Continuous Drain Current  
VGS at 10 V  
ID  
TC = 100 °C  
21  
A
Pulsed Drain Current a, e  
IDM  
120  
Linear Derating Factor  
Single Pulse Avalanche Energy b, e  
0.59  
200  
W/°C  
mJ  
EAS  
PD  
T
C = 25 °C  
88  
Maximum Power Dissipation  
W
V/ns  
°C  
TA = 25 °C  
3.7  
Peak Diode Recovery dV/dt c, e  
dV/dt  
4.5  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak temperature) d  
TJ, Tstg  
-55 to +175  
300  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 25 V, Starting TJ = 25 °C, L = 260 μH, Rg = 25 , IAS = 30 A (see fig. 12).  
c. ISD 30 A, dI/dt 200 A/μs, VDD VDS, TJ 175 °C.  
d. 1.6 mm from case.  
e. Uses IRFZ34, SiHFZ34 data and test conditions.  
S15-1659-Rev. D, 20-Jul-15  
Document Number: 90368  
1
For technical questions, contact: hvm@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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