IRFZ34

更新时间： 2024-10-31 22:24:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	197K
描述
Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A)

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IRFZ34 数据手册

PD - _____

PRELIMINARY

IRFZ34N

HEXFET^®Power MOSFET

Advanced Process Technology

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

V_DSS= 55V

R_DS(on)= 0.040Ω

I_D= 26A

Fully Avalanche Rated

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing

techniques to achieve the lowest possible on-resistance per silicon area. This

benefit, combined with the fast switching speed and ruggedized device design that

HEXFET Power MOSFETs are well known for, provides the designer with an

extremely efficient device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial

applications at power dissipation levels to approximately 50 watts. The low

thermal resistance and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

Absolute Maximum Ratings

Parameter

Continuous Drain Current, V _GS@ 10V

Pulsed Drain Current

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

100

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.37

±20

110

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

5.6

4.6

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw.

°C

300 (1.6mm from case)

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Min.

––––

Typ.

––––

0.50

Max.

2.7

Units

R_θJC

R_θCS

R_θJA

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

––––

°C/W

––––

8/29/95

12 3 4 5 6 7 8

中文翻译

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