是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | FLANGE MOUNT, S-MSFM-P3 | Reach Compliance Code: | compliant |
风险等级: | 5.83 | 外壳连接: | ISOLATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 500 V |
最大漏极电流 (ID): | 3.7 A | 最大漏源导通电阻: | 1.84 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-257AB |
JESD-30 代码: | S-MSFM-P3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | METAL | 封装形状: | SQUARE |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 14 A |
认证状态: | Not Qualified | 参考标准: | CECC |
表面贴装: | NO | 端子形式: | PIN/PEG |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFY430MEPBF | INFINEON |
获取价格 |
暂无描述 | |
IRFY430M-T257 | SEME-LAB |
获取价格 |
N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS | |
IRFY440 | SEME-LAB |
获取价格 |
N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS | |
IRFY440C | SEME-LAB |
获取价格 |
N-Channel MOSFET in a Hermetically sealed | |
IRFY440C | INFINEON |
获取价格 |
500V Single N-Channel HEXFET Power MOSFET in a Y-PAK (TO-257AB) package - Lead Trimmed | |
IRFY440CM | INFINEON |
获取价格 |
POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=0.85ohm, Id=7.0A) | |
IRFY440CMPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta | |
IRFY440CMSCS | INFINEON |
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Power Field-Effect Transistor, 7A I(D), 500V, 0.95ohm, 1-Element, N-Channel, Silicon, Meta | |
IRFY440CMSCX | INFINEON |
获取价格 |
Power Field-Effect Transistor, 7A I(D), 500V, 0.95ohm, 1-Element, N-Channel, Silicon, Meta | |
IRFY440CSCX | INFINEON |
获取价格 |
Power Field-Effect Transistor, 5.5A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Me |