Datasheet > IRFU1205

IRFU1205

更新时间： 2024-11-25 12:51:15

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
10页	315K
描述
HEXFETÂ® Power MOSFET

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中文翻译

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数据手册

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IRFU1205 数据手册

IRFR/U1205

HEXFET^®Power MOSFET

^lUltra Low On-Resistance

^lSurface Mount (IRFR1205)

^lStraight Lead (IRFU1205)

^lFast Switching

V_DSS= 55V

R_DS(on)= 0.027Ω

^lFully Avalanche Rated

Description

I_D= 44Aꢀ

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve the

lowest possible on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient device for use in a wide

variety of applications.

The D-PAK is designed for surface mounting using

vapor phase, infrared, or wave soldering techniques.

The straight lead version (IRFU series) is for through-

hole mounting applications. Power dissipation levels

up to 1.5 watts are possible in typical surface mount

applications.

D-PAK

T O -252AA

I-PAK

TO -251AA

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

44ꢀ

31ꢀ

160

107

0.71

± 20

210

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

5.0

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

1.4

Units

R_θJC

R_θJA

Junction-to-Ambient (PCB mount) **

Junction-to-Ambient

°C/W

110

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IRFU120PBF	INFINEON	获取价格	HEXFET POWER MOSFET ( VDSS = 100V , RDS(on) =
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