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IRFU13N15D PDF预览

IRFU13N15D

更新时间: 2024-11-05 22:24:07
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 130K
描述
Power MOSFET(Vdss=150V, Rds(on)max=0.18ohm, Id=14A)

IRFU13N15D 数据手册

 浏览型号IRFU13N15D的Datasheet PDF文件第2页浏览型号IRFU13N15D的Datasheet PDF文件第3页浏览型号IRFU13N15D的Datasheet PDF文件第4页浏览型号IRFU13N15D的Datasheet PDF文件第5页浏览型号IRFU13N15D的Datasheet PDF文件第6页浏览型号IRFU13N15D的Datasheet PDF文件第7页 
PD - 93905A  
IRFR13N15D  
IRFU13N15D  
SMPS MOSFET  
HEXFET® Power MOSFET  
Applications  
l High frequency DC-DC converters  
VDSS  
150V  
RDS(on) max  
ID  
14A  
0.18Ω  
Benefits  
l Low Gate-to-Drain Charge to Reduce  
Switching Losses  
l Fully Characterized Capacitance Including  
Effective COSS to Simplify Design, (See  
App. Note AN1001)  
l Fully Characterized Avalanche Voltage  
and Current  
D-Pak  
IRFR13N15D  
I-Pak  
IRFU13N15D  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
14  
9.8  
56  
A
PD @TC = 25°C  
Power Dissipation  
86  
W
W/°C  
V
Linear Derating Factor  
0.57  
VGS  
dv/dt  
TJ  
Gate-to-Source Voltage  
± 30  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
3.8  
V/ns  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
°C  
300 (1.6mm from case )  
Typical SMPS Topologies  
l Telecom 48V input Active Clamp Forward Converter  
Notes  through are on page 10  
www.irf.com  
1
6/29/00  

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