IRFU210PBF

更新时间： 2024-11-09 05:39:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	2400K
描述
Power MOSFET

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中文翻译

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数据手册

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IRFU210PBF 数据手册

IRFR210, IRFU210, SiHFR210, SiHFU210

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

200

Available

• Repetitive Avalanche Rated

_DS(on)(Ω)

V_GS= 10 V

1.5

RoHS*

• Surface Mount (IRFR210/SiHFR210)

• Straight Lead (IRFU210/SiHFU210)

• Available in Tape and Reel

• Fast Switching

Q_g(Max.) (nC)

8.2

1.8

COMPLIANT

_gs(nC)

_gd(nC)

4.5

Configuration

Single

• Ease of Paralleling

• Lead (Pb)-free Available

DPAK

(TO-252)

IPAK

(TO-251)

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU/SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface mount applications.

N-Channel MOSFET

ORDERING INFORMATION

Package

DPAK (TO-252)

IRFR210PbF

SiHFR210-E3

IRFR210

DPAK (TO-252)

IRFR210TRPbF^a

SiHFR210T-E3^a

IRFR210TR^a

DPAK (TO-252)

IPAK (TO-251)

IRFU210PbF

SiHFU210-E3

IRFU210

IRFR210TRLPbF^a

SiHFR210TL-E3^a

IRFR210TRL^a

Lead (Pb)-free

IRFR210TRR^a

SiHFR210TR^a

SnPb

SiHFR210

SiHFR210TL^a

SiHFR210T^a

SiHFU210

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

200

V_GS

T_C= 25 °C

T_C=100°C

2.6

Continuous Drain Current

V_GSat 10 V

I_D

1.7

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.20

0.020

130

W/°C

Linear Derating Factor (PCB Mount)^e

Single Pulse Avalanche Energy^b

Avalanche Current^a

E_AS

I_AR

2.7

Repetitive Avalanche Energy^a

E_AR

2.5

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)^e

Peak Diode Recovery dV/dt^c

T_C= 25 °C

P_D

V/ns

°C

T_A= 25 °C

2.5

dV/dt

5.0

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_J, T_stg

- 55 to + 150

260^d

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, starting T_J= 25 °C, L = 28 mH, R_G= 25 Ω, I_AS= 2.6 A (see fig. 12).

c. I_SD≤ 2.6 A, dI/dt ≤ 70 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91268

S-81394-Rev. A, 21-Jul-08

www.vishay.com

12 3 4 5 6 7 8

中文翻译

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与IRFU210PBF相关器件

型号	品牌	获取价格	描述	数据表
IRFU211	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 150V V(BR)DSS \| 2.7A I(D) \| TO-251AA
IRFU212	SAMSUNG	获取价格	Power Field-Effect Transistor, 2.1A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Met
IRFU212	INFINEON	获取价格	Power Field-Effect Transistor, 2.1A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Met
IRFU214	INTERSIL	获取价格	2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs
IRFU214	VISHAY	获取价格	Power MOSFET
IRFU214	KERSEMI	获取价格	Power MOSFET
IRFU214	INFINEON	获取价格	Power MOSFET(Vdss=250V, Rds(on)=2.0ohm, Id=2.2A)
IRFU214A	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 250V V(BR)DSS \| 2.2A I(D) \| TO-251AA
IRFU214ATU	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRFU214B	FAIRCHILD	获取价格	250V N-Channel MOSFET

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