Datasheet > IRFU220

IRFU220

更新时间： 2024-11-08 22:24:07

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关脉冲
页数	文件大小	规格书
7页	59K
描述
4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

IRFU220 数据手册

IRFR220, IRFU220

Data Sheet

July 1999

File Number 2410.2

4.6A, 200V, 0.800 Ohm, N-Channel Power

MOSFETs

Features

• 4.6A, 200V

These are N-Channel enhancement mode silicon gate

power ﬁeld effect transistors. They are advanced power

MOSFETs designed, tested, and guaranteed to withstand a

speciﬁed level of energy in the breakdown avalanche mode

of operation. All of these power MOSFETs are designed for

applications such as switching regulators, switching

convertors, motor drivers, relay drivers, and drivers for high

power bipolar switching transistors requiring high speed and

low gate drive power. These types can be operated directly

from integrated circuits.

• r

= 0.800Ω

DS(ON)

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Formerly developmental type TA9600.

Ordering Information

Symbol

PART NUMBER

IRFR220

IRFU220

PACKAGE

TO-252AA

TO-251AA

BRAND

IFR220

IFU220

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-251AA

JEDEC TO-252AA

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

DRAIN

SOURCE

DRAIN (FLANGE)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

4-389

12 3 4 5 6 7

中文翻译

下载PDF

IRFU220 替代型号

型号	品牌	替代类型	描述	数据表
FQU7N20TU	FAIRCHILD	功能相似	Power Field-Effect Transistor, 5.3A I(D), 200V, 0.69ohm, 1-Element, N-Channel, Silicon, Me
IRFU210PBF	VISHAY	功能相似	Power MOSFET
IRFU220PBF	VISHAY	功能相似	Power MOSFET

与IRFU220相关器件

型号	品牌	获取价格	描述	数据表
IRFU220A	FAIRCHILD	获取价格	Advanced Power MOSFET
IRFU220ATU	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRFU220B	FAIRCHILD	获取价格	200V N-Channel MOSFET
IRFU220BTLTU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met
IRFU220BTLTU_FP001	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRFU220BTU_FP001	FAIRCHILD	获取价格	Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met
IRFU220BTU-AM002	ONSEMI	获取价格	功率 MOSFET，N 沟道，B-FET，200 V，4.6 A，0.9 Ω，IPAK
IRFU220N	KERSEMI	获取价格	SMPS MOSFET
IRFU220N	INFINEON	获取价格	Power MOSFET(Vdss=200V, Rds(on)max=600mohm, Id=5.0A)
IRFU220NPBF	KERSEMI	获取价格	SMPS MOSFET