是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | TO-251AA |
包装说明: | LEAD FREE, PLASTIC, IPAK-3 | 针数: | 3 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
风险等级: | 5.27 | Is Samacsys: | N |
其他特性: | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 雪崩能效等级(Eas): | 18 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (Abs) (ID): | 8.7 A |
最大漏极电流 (ID): | 8.7 A | 最大漏源导通电阻: | 0.19 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-251AA |
JESD-30 代码: | R-PSIP-T3 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 35 W | 最大脉冲漏极电流 (IDM): | 35 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Matte Tin (Sn) - with Nickel (Ni) barrier |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
IRFU120Z | INFINEON | AUTOMOTIVE MOSFET |
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|
IRFU120ZPBF | INFINEON | AUTOMOTIVE MOSFET |
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|
IRFU121 | RENESAS | 8.4A, 80V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
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|
IRFU12N25D | INFINEON | SMPS MOSFET |
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|
IRFU12N25DPBF | KERSEMI | SMPS MOSFET |
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|
IRFU12N25DPBF | INFINEON | HEXFET Power MOSFET ( VDSS = 250V , RDS(on)ma |
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