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IRFU12N25DPBF PDF预览

IRFU12N25DPBF

更新时间: 2024-11-06 04:13:51
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
11页 226K
描述
HEXFET Power MOSFET ( VDSS = 250V , RDS(on)max = 0.26ヘ , ID = 14A )

IRFU12N25DPBF 数据手册

 浏览型号IRFU12N25DPBF的Datasheet PDF文件第2页浏览型号IRFU12N25DPBF的Datasheet PDF文件第3页浏览型号IRFU12N25DPBF的Datasheet PDF文件第4页浏览型号IRFU12N25DPBF的Datasheet PDF文件第5页浏览型号IRFU12N25DPBF的Datasheet PDF文件第6页浏览型号IRFU12N25DPBF的Datasheet PDF文件第7页 
PD - 95353A  
IRFR12N25DPbF  
IRFU12N25DPbF  
SMPS MOSFET  
HEXFET® Power MOSFET  
Applications  
l High frequency DC-DC converters  
l Lead-Free  
VDSS  
250V  
RDS(on) max  
ID  
14A  
0.26Ω  
Benefits  
l Low Gate-to-Drain Charge to Reduce  
Switching Losses  
l Fully Characterized Capacitance Including  
Effective COSS to Simplify Design, (See  
App. Note AN1001)  
l Fully Characterized Avalanche Voltage  
and Current  
D-Pak  
IRFR12N25D  
I-Pak  
IRFU12N25D  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
14  
9.7  
A
56  
PD @TC = 25°C  
Power Dissipation  
144  
W
W/°C  
V
Linear Derating Factor  
0.96  
VGS  
dv/dt  
TJ  
Gate-to-Source Voltage  
± 30  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
9.3  
V/ns  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
°C  
300 (1.6mm from case )  
Thermal Resistance  
Parameter  
Typ.  
Max.  
Units  
RθJC  
RθJA  
RθJA  
Junction-to-Case  
–––  
–––  
–––  
1.04  
Junction-to-Ambient (PCB mount)*  
Junction-to-Ambient  
50  
°C/W  
110  
Notes  through are on page 10  
www.irf.com  
1
12/2/04  

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