IRFU120A

更新时间： 2024-11-24 22:24:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	257K
描述
Advanced Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRFU120A 数据手册

IRFR/U120A

Advanced Power MOSFET

FEATURES

BV_DSS= 100 V

Avalanche Rugged Technology

Rugged Gate Oxide Technology

Lower Input Capacitance

R_DS(on)= 0.2

I_D= 8.4 A

Improved Gate Charge

Extended Safe Operating Area

D-PAK

I-PAK

Lower Leakage Current : 10 A (Max.) @ V_DS= 100V

Lower R_DS(ON): 0.155 (Typ.)

1. Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol

Characteristic

Drain-to-Source Voltage

Value

100

8.4

Units

V_DSS

Continuous Drain Current (T_C=25 C)

I_D

Continuous Drain Current (T_C=100 C)

5.3

I_DM

V_GS

E_AS

I_AR

Drain Current-Pulsed

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

141

8.4

3.2

6.5

2.5

E_AR

dv/dt

Repetitive Avalanche Energy

V/ns

Peak Diode Recovery dv/dt

Total Power Dissipation (T =25

)

P_D

Total Power Dissipation (T =25

Linear Derating Factor

0.26

W/ C

Operating Junction and

Storage Temperature Range

T_J, T_STG

- 55 to +150

300

Maximum Lead Temp. for Soldering

Purposes, 1/8” from case for 5-seconds

T_L

Thermal Resistance

Symbol

Characteristic

Typ.

Max.

Units

R_q

Junction-to-Case

3.9

R_q

Junction-to-Ambient

R_qJA

110

When mounted on the minimum pad size recommended (PCB Mount).

Rev. B

12 3 4 5 6 7

中文翻译

下载PDF

与IRFU120A相关器件

型号	品牌	获取价格	描述	数据表
IRFU120N	INFINEON	获取价格	HEXFET Power MOSFET
IRFU120N	KERSEMI	获取价格	Surface Mount (IRFR120N)
IRFU120NPBF	INFINEON	获取价格	Fast Switching
IRFU120NPBF	KERSEMI	获取价格	Surface Mount (IRFR120N) Straight Lead (IRFU120N)
IRFU120PBF	INFINEON	获取价格	HEXFET POWER MOSFET ( VDSS = 100V , RDS(on) =
IRFU120PBF	VISHAY	获取价格	IRFR120
IRFU120PBF	KERSEMI	获取价格	Power MOSFET
IRFU120TR	INFINEON	获取价格	HEXFET POWER MOSFET
IRFU120Z	INFINEON	获取价格	AUTOMOTIVE MOSFET
IRFU120ZPBF	INFINEON	获取价格	AUTOMOTIVE MOSFET