Datasheet > IRFSL9N60A, SiHFSL9N60A

IRFSL9N60A, SiHFSL9N60A

更新时间： 2024-11-19 14:55:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
11页	256K
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Power MOSFET

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IRFSL9N60A, SiHFSL9N60A 数据手册

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IRFSL9N60A, SiHFSL9N60A

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

• Low gate charge Q_gresults in simple drive

requirement

I²PAK (TO-262)

Available

• Improved gate, avalanche, and dynamic dv/dt

ruggedness

• Fully characterized capacitance and avalanche

voltage and current

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

N-Channel MOSFET

Note

This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details



PRODUCT SUMMARY



V_DS(V)

600

_DS(on)()

V_GS= 10 V

0.75

APPLICATIONS

Q_gmax. (nC)

• Switch mode power supply (SMPS)

• Uninterruptable power supply

• High speed power switching

_gs(nC)

_gd(nC)

Configuration

Single

• This device is only for through-hole application

APPLICABLE OFF LINE SMPS TOPOLOGIES

• Active clamped forward

• Main switch

ORDERING INFORMATION

Package

I²PAK (TO-262)

Lead (Pb)-free and halogen-free

Lead (Pb)-free

SiHFSL9N60A-GE3

IRFSL9N60APbF

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

600

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

_C= 25 °C

9.2

Continuous drain current

V_GSat 10 V

I_D

T_C= 100 °C

5.8

Pulsed drain current ^a

I_DM

Linear derating factor

1.3

W/°C

Single pulse avalanche energy ^b

Repetitive avalanche current ^a

Repetitive avalanche energy ^a

Maximum power dissipation

E_AS

I_AR

290

9.2

E_AR

_C= 25 °C

P_D

170

Peak diode recovery dv/dt ^c

dv/dt

T_J, T_stg

5.0

V/ns

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^d

-55 to +150

300

°C

For 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. Starting T_J= 25 °C, L = 6.8 mH, R_g= 25 , I_AS= 9.2 A (see fig. 12)

c. I_SD 9.2 A, di/dt  50 A/μs, V_DD V_DS, T_J 150 °C

d. 1.6 mm from case

S20-0684-Rev. D, 07-Sep-2020

Document Number: 90362

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...11

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与IRFSL9N60A, SiHFSL9N60A相关器件

型号	品牌	获取价格	描述	数据表
IRFSL9N60APBF	VISHAY	获取价格	Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Me
IRFSL9N60APBF	INFINEON	获取价格	Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Me
IRFSL9N60ATRL	INFINEON	获取价格	Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Me
IRFSL9N60ATRLPBF	VISHAY	获取价格	Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Me
IRFSL9N60ATRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Me
IRFSL9N60ATRR	INFINEON	获取价格	Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Me
IRFSL9N60ATRR	VISHAY	获取价格	Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Me
IRFSL9N60ATRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Me
IRFSZ14A	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 8A I(D) \| TO-220AB
IRFSZ20	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 50V V(BR)DSS \| 13A I(D) \| SOT-186

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