Datasheet > IRFS7762PBF

IRFS7762PBF

更新时间： 2024-11-25 01:21:03

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	618K
描述
Brushed motor drive applications

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRFS7762PBF 数据手册

StrongIRFET™

IRFS7762PbF

IRFSL7762PbF

HEXFET^®Power MOSFET

Application

 Brushed motor drive applications

 BLDC motor drive applications

 Battery powered circuits

 Half-bridge and full-bridge topologies

 Synchronous rectifier applications

 Resonant mode power supplies

 OR-ing and redundant power switches

 DC/DC and AC/DC converters

 DC/AC inverters

V_DSS

75V

R_DS(on)typ.

5.6m

6.7m

85A

max

I_D

Benefits

 Improved gate, avalanche and dynamic dV/dt ruggedness

 Fully characterized capacitance and avalanche SOA

 Enhanced body diode dV/dt and dI/dt capability

 Lead-free, RoHS compliant

TO-262

IRFSL7762PbF

D2Pak

IRFS7762PbF

Gate

Drain

Source

Standard Pack

Form

Base part number

IRFSL7762PbF

IRFS7762PbF

Package Type

TO-262

Orderable Part Number

Quantity

Tube

IRFSL7762PbF

IRFS7762PbF

D²-Pak

Tape and Reel Left

800

IRFS7762TRLPbF

100

= 51A

= 125°C

= 25°C

10 12 14 16 18 20

100

125

150

175

, Case Temperature (°C)

Gate -to -Source Voltage (V)

GS,

Fig 2. Maximum Drain Current vs. Case Temperature

Fig 1. Typical On-Resistance vs. Gate Voltage

www.irf.com

Submit Datasheet Feedback

February 19, 2015

12 3 4 5 6 7...12

中文翻译

下载PDF

与IRFS7762PBF相关器件

型号	品牌	获取价格	描述	数据表
IRFS7762PBF_15	INFINEON	获取价格	Brushed motor drive applications
IRFS7787PBF	INFINEON	获取价格	Brushed Motor drive applications
IRFS7787PBF_15	INFINEON	获取价格	Brushed Motor drive applications
IRFS820	SAMSUNG	获取价格	Power Field-Effect Transistor, 2.1A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal
IRFS820A	FAIRCHILD	获取价格	Advanced Power MOSFET
IRFS820B	FAIRCHILD	获取价格	500V N-Channel MOSFET
IRFS820B_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2.5A I(D), 500V, 2.6ohm, 1-Element, N-Channel, Silicon, Met
IRFS820BT	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2.5A I(D), 500V, 2.6ohm, 1-Element, N-Channel, Silicon, Met
IRFS821	SAMSUNG	获取价格	Power Field-Effect Transistor, 2.1A I(D), 450V, 3ohm, 1-Element, N-Channel, Silicon, Metal
IRFS822	SAMSUNG	获取价格	Power Field-Effect Transistor, 2.2A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal