Datasheet > IRFS7787PBF

IRFS7787PBF

更新时间： 2024-11-28 01:10:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
13页	990K
描述
Brushed Motor drive applications

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中文翻译

获取价格

数据手册

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IRFS7787PBF 数据手册

StrongIRFET™

IRFB7787PbF

IRFS7787PbF

IRFSL7787PbF

HEXFET^®Power MOSFET

Application

 Brushed Motor drive applications

 BLDC Motor drive applications

 Battery powered circuits

 Half-bridge and full-bridge topologies

 Synchronous rectifier applications

 Resonant mode power supplies

 OR-ing and redundant power switches

 DC/DC and AC/DC converters

 DC/AC Inverters

V_DSS

75V

R_DS(on)typ.

6.9m

8.4m

76A

max

I_D

Benefits

 Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

 Fully Characterized Capacitance and Avalanche SOA

 Enhanced body diode dV/dt and dI/dt Capability

 Lead-Free, RoHS Compliant

D²Pak

TO-220AB

TO-262

IRFB7787PbF

IRFSL7787PbF

IRFS7787PbF

Gate

Drain

Source

Base part number

Package Type

Standard Pack

Form

Orderable Part Number

Quantity

IRFB7787PbF

IRFSL7787PbF

TO-220

TO-262

Tube

IRFB7787PbF

IRFSL7787PbF

IRFS7787PbF

Tube

IRFS7787PbF

D²-Pak

Tape and Reel Left

800

IRFS7787TRLPbF

= 46A

T = 125°C

T = 25°C

100

125

150

175

, Gate-to-Source Voltage (V)

, CaseTemperature (°C)

Fig 2. Maximum Drain Current vs. Case Temperature

Fig 1. Typical On-Resistance vs. Gate Voltage

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与IRFS7787PBF相关器件

型号	品牌	获取价格	描述	数据表
IRFS7787PBF_15	INFINEON	获取价格	Brushed Motor drive applications
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IRFS820A	FAIRCHILD	获取价格	Advanced Power MOSFET
IRFS820B	FAIRCHILD	获取价格	500V N-Channel MOSFET
IRFS820B_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2.5A I(D), 500V, 2.6ohm, 1-Element, N-Channel, Silicon, Met
IRFS820BT	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2.5A I(D), 500V, 2.6ohm, 1-Element, N-Channel, Silicon, Met
IRFS821	SAMSUNG	获取价格	Power Field-Effect Transistor, 2.1A I(D), 450V, 3ohm, 1-Element, N-Channel, Silicon, Metal
IRFS822	SAMSUNG	获取价格	Power Field-Effect Transistor, 2.2A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal
IRFS823	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 450V V(BR)DSS \| 1.5A I(D) \| TO-220VAR
IRFS830	SAMSUNG	获取价格	Power Field-Effect Transistor, 3.1A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Met