Datasheet > 晶体管 > 功率场效应晶体管> IRFS17N20DPBF

IRFS17N20DPBF

更新时间： 2024-11-07 03:09:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	279K
描述
HEXFET Power MOSFET

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

IRFS17N20DPBF 数据手册

PD- 95325

IRFB17N20DPbF

IRFS17N20DPbF

SMPS MOSFET

IRFSL17N20DPbF

HEXFET^®Power MOSFET

Applications

l High frequency DC-DC converters

V_DSS

200V

R_DS(on)max

I_D

16A

0.17Ω

l Lead-Free

Benefits

l Low Gate-to-Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C_OSSto Simplify Design, (See

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

D²Pak

IRFS17N20D

TO-262

IRFSL17N20D

TO-220AB

IRFB17N20D

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

P_D@T_A= 25°C

P_D@T_C= 25°C

Power Dissipation

3.8

Power Dissipation

140

Linear Derating Factor

0.90

W/°C

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 30

Peak Diode Recovery dv/dt

Operating Junction and

2.7

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torqe, 6-32 or M3 screw

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Typical SMPS Topologies

l Telecom 48V input Forward Converter

Notes through ꢀ are on page 11

www.irf.com

6/1/04

12 3 4 5 6 7...12

中文翻译

下载PDF

IRFS17N20DPBF 替代型号

型号	品牌	替代类型	描述	数据表
IRFS4620PBF	INFINEON	类似代替	HEXFET Power MOSFET

与IRFS17N20DPBF相关器件

型号	品牌	获取价格	描述	数据表
IRFS17N20DTRL	INFINEON	获取价格	Power Field-Effect Transistor, 16A I(D), 200V, 0.17ohm, 1-Element, N-Channel, Silicon, Met
IRFS17N20DTRLP	INFINEON	获取价格	Power Field-Effect Transistor, 16A I(D), 200V, 0.17ohm, 1-Element, N-Channel, Silicon, Met
IRFS17N20DTRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 16A I(D), 200V, 0.17ohm, 1-Element, N-Channel, Silicon, Met
IRFS17N20DTRR	INFINEON	获取价格	Power Field-Effect Transistor, 16A I(D), 200V, 0.17ohm, 1-Element, N-Channel, Silicon, Met
IRFS17N20DTRRP	INFINEON	获取价格	Power Field-Effect Transistor, 16A I(D), 200V, 0.17ohm, 1-Element, N-Channel, Silicon, Met
IRFS17N20DTRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 16A I(D), 200V, 0.17ohm, 1-Element, N-Channel, Silicon, Met
IRFS1Z0	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 820MA I(D) \| TO-243AA
IRFS1Z0TR	INFINEON	获取价格	Power Field-Effect Transistor, 0.82A I(D), 100V, 2.4ohm, 1-Element, N-Channel, Silicon, Me
IRFS1Z0TRL	INFINEON	获取价格	Power Field-Effect Transistor, 0.82A I(D), 100V, 2.4ohm, 1-Element, N-Channel, Silicon, Me
IRFS1Z3	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 750MA I(D) \| TO-243AA