型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFR9111 | ETC |
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TRANSISTOR | MOSFET | P-CHANNEL | 80V V(BR)DSS | 3.2A I(D) | TO-252 | |
IRFR9120 | KERSEMI |
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Dynamic dV/dt Rating | |
IRFR9120 | VISHAY |
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Power MOSFET | |
IRFR9120 | INTERSIL |
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5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs | |
IRFR9120 | INFINEON |
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Power MOSFET(Vdss=-100V, Rds(on)=0.60ohm, Id=-5.6A) | |
IRFR9120 | SAMSUNG |
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Power Field-Effect Transistor, 5.9A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Met | |
IRFR9120, IRFU9120, SiHFR9120, SiHFU9120 | VISHAY |
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Power MOSFET | |
IRFR91209A | ETC |
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TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 5.6A I(D) | TO-252AA | |
IRFR9120N | INFINEON |
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Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.6A) | |
IRFR9120N | FREESCALE |
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HEXFET® Power MOSFET |