Datasheet > IRFR9120T_R4941

IRFR9120T_R4941

更新时间： 2024-10-31 10:18:15

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	114K
描述
Transistor

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数据手册

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IRFR9120T_R4941 数据手册

IRFR9120, IRFU9120

Data Sheet

January 2002

5.6A, 100V, 0.600 Ohm, P-Channel Power

MOSFETs

Features

• 5.6A, 100V

These advanced power MOSFETs are designed, tested, and

guaranteed to withstand a speciﬁc level of energy in the

avalanche breakdown mode of operation. They are

P-Channel enhancement mode silicon gate power ﬁeld

effect transistors designed for applications such as switching

regulators, switching convertors, motor drivers, relay drivers,

and drivers for high power bipolar switching transistors

requiring high speed and low gate-drive power. They can be

operated directly from integrated circuits.

• r = 0.600Ω

DS(ON)

• Temperature Compensating PSPICE™ Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Formerly developmental type TA17501.

Symbol

Ordering Information

PART NUMBER

PACKAGE

TO-252AA

TO-251AA

BRAND

IF9120

IRFR9120

IRFU9120

NOTE: When ordering use the entire part number. Add the sufﬁx 9A

to obtain the TO-252AA variant in tape and reel, e.g., IRFR91209A.

Packaging

JEDECTO-251AA

JEDEC TO-252AA

SOURCE

DRAIN

GATE

SOURCE

DRAIN (FLANGE)

IRFR9120, IRFU9120 Rev. B

12 3 4 5 6 7

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