Datasheet > IRFR9120NTR

IRFR9120NTR

更新时间： 2024-05-23 22:23:41

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
5页	1670K
描述
种类:P-Channel;漏源电压（Vdss）:-100V;持续漏极电流（Id）（在25°C时）:-8A;Vgs(th)(V):±20;漏源导通电阻:235mΩ@-10V

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IRFR9120NTR 数据手册

UMW

IRFR9120

-100V P-Channel Enhancement Mode MOSFET

Description

The

uses advanced trench technology

IRFR9120NT

and design to provide excellent R_DS(ON)with low gat

e charge. It can be used in a wide variety of applications.

It is ESD protested.

General Features

V_DS=-100V,I_D=-8A

R_DS(ON)<210m @ V_GS=-10V (Typ:145m )

Super high dense cell design

Advanced trench process technology

Reliable and rugged

High density celldesign for ultra low on-resistance

Application

Power switch

DC/DC converters

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

VDS

Limit

-100

±20

Unit

Drain-Source Voltage

Gate-Source Voltage

VGS

Drain Current-Continuous

-8

I_D

-6

-30

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

I_D(100℃)

IDM

Maximum Power Dissipation

P_D

Derating factor

0.32

W/℃

Single pulse avalanche energy ^{(Note 5)}

Operating Junction and Storage Temperature Range

E_AS

110

-55 To 150

℃

TJ,TSTG

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5

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