是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | LEAD FREE, PLASTIC, DPAK-3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 15 weeks |
风险等级: | 6.99 | Samacsys Description: | MOSFET 30V 1 N-CH HEXFET 12.5mOhms 24nC |
雪崩能效等级(Eas): | 213 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (Abs) (ID): | 61 A | 最大漏极电流 (ID): | 30 A |
最大漏源导通电阻: | 0.0125 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-252AA | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 87 W |
最大脉冲漏极电流 (IDM): | 244 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) - with Nickel (Ni) barrier | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IRFR3708TRLPBF | INFINEON |
类似代替 |
Power Field-Effect Transistor, 30A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Me | |
IRFR3708PBF | INFINEON |
类似代替 |
HEXFET㈢Power MOSFET |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFR3708TRR | INFINEON |
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暂无描述 | |
IRFR3709Z | KERSEMI |
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High Frequency Synchronous Buck Converters for Computer Processor Power | |
IRFR3709Z | INFINEON |
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HEXFET Power MOSFET | |
IRFR3709Z | FREESCALE |
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HEXFET Power MOSFET | |
IRFR3709ZCPBF | INFINEON |
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HEXFET Power MOSFET | |
IRFR3709ZCPBF | KERSEMI |
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High Frequency Synchronous Buck Converters for Computer Processor Power | |
IRFR3709ZCTRLPBF | INFINEON |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IRFR3709ZCTRPBF | INFINEON |
获取价格 |
High Frequency Synchronous Buck Converters for Computer Processor Power | |
IRFR3709ZCTRRPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IRFR3709ZPBF | INFINEON |
获取价格 |
HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max |