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IRFR3708TRPBF PDF预览

IRFR3708TRPBF

更新时间: 2024-09-10 20:52:35
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
10页 129K
描述
Power Field-Effect Transistor, 30A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

IRFR3708TRPBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:LEAD FREE, PLASTIC, DPAK-3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:6.99Samacsys Description:MOSFET 30V 1 N-CH HEXFET 12.5mOhms 24nC
雪崩能效等级(Eas):213 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):61 A最大漏极电流 (ID):30 A
最大漏源导通电阻:0.0125 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):87 W
最大脉冲漏极电流 (IDM):244 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON

IRFR3708TRPBF 数据手册

 浏览型号IRFR3708TRPBF的Datasheet PDF文件第2页浏览型号IRFR3708TRPBF的Datasheet PDF文件第3页浏览型号IRFR3708TRPBF的Datasheet PDF文件第4页浏览型号IRFR3708TRPBF的Datasheet PDF文件第5页浏览型号IRFR3708TRPBF的Datasheet PDF文件第6页浏览型号IRFR3708TRPBF的Datasheet PDF文件第7页 
PD - 93935B  
IRFR3708  
IRFU3708  
SMPS MOSFET  
HEXFET® Power MOSFET  
Applications  
l High Frequency DC-DC Isolated Converters  
with Synchronous Rectification for Telecom  
and Industrial Use  
VDSS  
30V  
RDS(on) max  
ID  
61A  
„
12.5mΩ  
l High Frequency Buck Converters for  
Computer Processor Power  
Benefits  
l Ultra-Low Gate Impedance  
l Very Low RDS(on) at 4.5V VGS  
l Fully Characterized Avalanche Voltage  
D-Pak  
IRFR3708  
I-Pak  
IRFU3708  
and Current  
Absolute Maximum Ratings  
Symbol  
Parameter  
Max.  
Units  
VDS  
Drain-Source Voltage  
30  
V
V
VGS  
Gate-to-Source Voltage  
± 12  
61 „  
51 „  
244  
87  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
A
PD @TA = 25°C  
PD @TA = 70°C  
Maximum Power Dissipationƒ  
Maximum Power Dissipationƒ  
Linear Derating Factor  
W
W
61  
0.58  
W/°C  
°C  
TJ , TSTG  
Junction and Storage Temperature Range  
-55 to + 175  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
Max.  
1.73  
50  
Units  
RθJC  
RθJA  
RθJA  
–––  
–––  
–––  
Junction-to-Ambient (PCB mount)*  
Junction-to-Ambient  
°C/W  
110  
*
When mounted on 1" square PCB (FR-4 or G-10 Material) .  
For recommended footprint and soldering techniques refer to application note #AN-994  
Notes  through „are on page 9  
www.irf.com  
1
8/22/00  

IRFR3708TRPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRFR3708TRLPBF INFINEON

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Power Field-Effect Transistor, 30A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Me
IRFR3708PBF INFINEON

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