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IRFR3709Z PDF预览

IRFR3709Z

更新时间: 2024-11-04 22:40:59
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 216K
描述
HEXFET Power MOSFET

IRFR3709Z 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:PLASTIC, DPAK-3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.26
雪崩能效等级(Eas):100 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):30 A最大漏源导通电阻:0.0065 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252AA
JESD-30 代码:R-PSSO-G2JESD-609代码:e0
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):245极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):340 A认证状态:Not Qualified
表面贴装:YES端子面层:TIN LEAD
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICON

IRFR3709Z 数据手册

 浏览型号IRFR3709Z的Datasheet PDF文件第2页浏览型号IRFR3709Z的Datasheet PDF文件第3页浏览型号IRFR3709Z的Datasheet PDF文件第4页浏览型号IRFR3709Z的Datasheet PDF文件第5页浏览型号IRFR3709Z的Datasheet PDF文件第6页浏览型号IRFR3709Z的Datasheet PDF文件第7页 
PD - 94712  
IRFR3709Z  
IRFU3709Z  
HEXFET® Power MOSFET  
Applications  
l High Frequency Synchronous Buck  
Converters for Computer Processor Power  
l High Frequency Isolated DC-DC  
Converters with Synchronous Rectification  
for Telecom and Industrial Use  
VDSS RDS(on) max  
Qg  
17nC  
6.5m:  
30V  
Benefits  
l Very Low RDS(on) at 4.5V VGS  
l Ultra-Low Gate Impedance  
l Fully Characterized Avalanche Voltage  
and Current  
D-Pak  
I-Pak  
IRFR3709Z  
IRFU3709Z  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Max.  
30  
Units  
V
VDS  
V
Gate-to-Source Voltage  
± 20  
86  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
@ TC = 25°C  
A
D
D
61  
@ TC = 100°C  
340  
79  
DM  
P
P
@TC = 25°C  
Maximum Power Dissipation  
Maximum Power Dissipation  
W
D
D
@TC = 100°C  
39  
Linear Derating Factor  
Operating Junction and  
0.53  
W/°C  
°C  
T
-55 to + 175  
J
T
Storage Temperature Range  
STG  
Soldering Temperature, for 10 seconds  
300 (1.6mm from case)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
–––  
–––  
Max.  
1.9  
Units  
°C/W  
RθJC  
RθJA  
RθJA  
Junction-to-Ambient (PCB Mount)  
Junction-to-Ambient  
50  
110  
Notes  through are on page 11  
www.irf.com  
1
06/23/03  

IRFR3709Z 替代型号

型号 品牌 替代类型 描述 数据表
IRFR3709ZTRRPBF INFINEON

类似代替

Power Field-Effect Transistor, 30A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Me
IRFR3709ZTRPBF INFINEON

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High Frequency Synchronous Buck Converters for Computer Processor Power
IRFR3709ZPBF INFINEON

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HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max

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