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IRFR3709ZCPBF PDF预览

IRFR3709ZCPBF

更新时间: 2024-11-24 03:09:15
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管脉冲
页数 文件大小 规格书
11页 294K
描述
HEXFET Power MOSFET

IRFR3709ZCPBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:LEAD FREE, DPAK-3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.1
雪崩能效等级(Eas):100 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):86 A最大漏极电流 (ID):86 A
最大漏源导通电阻:0.0065 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):79 W
最大脉冲漏极电流 (IDM):340 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管元件材料:SILICONBase Number Matches:1

IRFR3709ZCPBF 数据手册

 浏览型号IRFR3709ZCPBF的Datasheet PDF文件第2页浏览型号IRFR3709ZCPBF的Datasheet PDF文件第3页浏览型号IRFR3709ZCPBF的Datasheet PDF文件第4页浏览型号IRFR3709ZCPBF的Datasheet PDF文件第5页浏览型号IRFR3709ZCPBF的Datasheet PDF文件第6页浏览型号IRFR3709ZCPBF的Datasheet PDF文件第7页 
PD - 96046  
IRFR3709ZCPbF  
IRFU3709ZCPbF  
HEXFET® Power MOSFET  
Applications  
l High Frequency Synchronous Buck  
Converters for Computer Processor Power  
l High Frequency Isolated DC-DC  
Converters with Synchronous Rectification  
for Telecom and Industrial Use  
l Lead-Free  
VDSS RDS(on) max  
Qg  
17nC  
6.5m  
30V  
Benefits  
l Very Low RDS(on) at 4.5V VGS  
l Ultra-Low Gate Impedance  
l Fully Characterized Avalanche Voltage  
and Current  
I-Pak  
IRFU3709ZCPbF  
D-Pak  
IRFR3709ZCPbF  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Max.  
30  
Units  
V
VDS  
V
Gate-to-Source Voltage  
± 20  
86  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
@ TC = 25°C  
A
D
D
61  
@ TC = 100°C  
340  
79  
DM  
P
P
@TC = 25°C  
@TC = 100°C  
Maximum Power Dissipation  
Maximum Power Dissipation  
W
D
D
39  
Linear Derating Factor  
Operating Junction and  
0.53  
W/°C  
°C  
T
-55 to + 175  
J
T
Storage Temperature Range  
STG  
Soldering Temperature, for 10 seconds  
300 (1.6mm from case)  
Thermal Resistance  
Parameter  
Typ.  
–––  
–––  
–––  
Max.  
1.9  
Units  
Rθ  
Rθ  
Rθ  
Junction-to-Case  
°C/W  
JC  
JA  
JA  
Junction-to-Ambient (PCB Mount)  
Junction-to-Ambient  
50  
110  
Notes  through are on page 11  
www.irf.com  
1
04/20/06  

IRFR3709ZCPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRFR3709ZTRRPBF INFINEON

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