Datasheet > IRFR3709ZTRL

IRFR3709ZTRL

更新时间： 2024-02-18 06:13:08

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	265K
描述
Power Field-Effect Transistor, 30A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3

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IRFR3709ZTRL 数据手册

PD - 95072A

IRFR3709ZPbF

IRFU3709ZPbF

HEXFET^®Power MOSFET

Applications

l High Frequency Synchronous Buck

Converters for Computer Processor Power

l High Frequency Isolated DC-DC

Converters with Synchronous Rectification

for Telecom and Industrial Use

l Lead-Free

V_DSSR_DS(on)max

17nC

6.5m

30V

Benefits

l Very Low R_DS(on)at 4.5V V_GS

l Ultra-Low Gate Impedance

l Fully Characterized Avalanche Voltage

and Current

I-Pak

IRFU3709ZPbF

D-Pak

IRFR3709ZPbF

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Max.

Units

V_DS

Gate-to-Source Voltage

± 20

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_C= 25°C

@ T_C= 100°C

340

@T_C= 25°C

@T_C= 100°C

Maximum Power Dissipation

Linear Derating Factor

Operating Junction and

0.53

W/°C

°C

-55 to + 175

Storage Temperature Range

STG

Soldering Temperature, for 10 seconds

300 (1.6mm from case)

Thermal Resistance

Parameter

Typ.

–––

Max.

1.9

Units

R_θ

Junction-to-Case

°C/W

Junction-to-Ambient (PCB Mount)

Junction-to-Ambient

110

Notes through ꢀ are on page 11

www.irf.com

12/2/04

12 3 4 5 6 7...12

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